Datasheet > A150N50X4C

A150N50X4C

更新时间： 2024-10-28 21:14:27

品牌	Logo	应用领域
安伦 - ANAREN		射频微波
页数	文件大小	规格书
2页	227K
描述
RF/Microwave Termination, 0MHz Min, 3000MHz Max, 50ohm, ROHS COMPLIANT PACKAGE-1

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技术参数
数据手册

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A150N50X4C 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	ROHS COMPLIANT PACKAGE-1	Reach Compliance Code：	compliant
风险等级：	5.74	特性阻抗：	50 Ω
构造：	COMPONENT	最大输入功率 (CW)：	51.76 dBm
最大工作频率：	3000 MHz	最小工作频率：
最高工作温度：	150 °C	最低工作温度：	-55 °C
射频/微波设备类型：	RF/MICROWAVE TERMINATION	最大电压驻波比：	1.1
Base Number Matches：	1

A150N50X4C 数据手册

Model A150N50X4C

Chip Termination

150 Watts, 50

ꢀ

Description

The A150N50X4C is high performance Aluminum Nitride (AlN) chip

termination intended as a cost competitive alternative to Beryllium Oxide

(BeO). It is well suited to all cellular frequency bands such as; AMPS,

GSM, DCS, PCS, PHS and UMTS. The high power handling makes the

part ideal for terminating circulators, and for use in power combiners. The

termination is also RoHS compliant!

General Specifications

Resistive Element

Substrate

Thick film

Features:

AlN Ceramic

• RoHS Compliant

• 150 Watts

Terminal Finish

Matte Tin over Nickel Barrier

Operating Temperature

Tolerance is ±0.010”, unless otherwise specified. Designed to meet or exceed

applicable portions of MIL-E-5400. All dimensions in inches.

-55 to +150°C (see de rating chart)

• DC – 3.0 GHz

• AlN Ceramic

Electrical Specifications

Resistance Value:

Power:

50 Ohms, ± 2%

150 Watts

• Non-Nichrome Resistive

Element

Frequency Range:

DC – 3.0 GHz

• Low VSWR

Return Loss

>26dB

•

100% Tested

Specification based on unit properly installed using suggested mounting instructions

and a 50 ohm nominal impedance. Specifications subject to change.

Outline Drawing

UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES (mm)

pg1 of 2

USA/Canada:

Toll Free:

(315) 432-8909

(800) 544-2414

+44 2392-232392

Europe

中文翻译

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