是否Rohs认证: | 不符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | Reach Compliance Code: | not_compliant |
风险等级: | 5.77 | 最大集电极电流 (IC): | 0.5 A |
基于收集器的最大容量: | 25 pF | 集电极-发射极最大电压: | 350 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JEDEC-95代码: | TO-126 | JESD-30 代码: | R-PSFM-T3 |
JESD-609代码: | e0 | 元件数量: | 1 |
端子数量: | 3 | 最高工作温度: | 150 °C |
最低工作温度: | -65 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 20 W | 表面贴装: | NO |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
标称过渡频率 (fT): | 10 MHz | VCEsat-Max: | 10 V |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N5657LEADFREE | CENTRAL | Power Bipolar Transistor, 0.5A I(C), 350V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plast |
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2N5658 | MICROSEMI | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-59, Metal, 3 |
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2N5659 | VISHAY | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, |
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2N5659E3 | MICROSEMI | Power Bipolar Transistor, 10A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-111, Metal, |
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2N5660 | SAVANTIC | Silicon NPN Power Transistors |
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2N5660 | ISC | Silicon NPN Power Transistors |
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