Datasheet > 2SK2974

2SK2974

更新时间： 2022-12-12 20:11:50

品牌	Logo	应用领域
三菱 - MITSUBISHI		放大器功率放大器
页数	文件大小	规格书
3页	33K
描述
RF POWER MOS FET(VHF/UHF power amplifiers)

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2SK2974 数据手册

MITSUBISHI RF POWER MOS FET

2SK2974

DESCRIPTION

2SK2974 is a MOS FET type transistor specifically designed for

Dimensions in mm

OUTLINE DRAWING

VHF/UHF power amplifiers applications.

INDEX MARK

(TOP)

(BOTTOM)

FEATURES

• High power gain:Gpe³ 8.4dB

@VDD=7.2V,f=450MHz,Pin=30dBm

• High efficiency:55% typ.

• Source case type seramic package

(connected internally to source)

2.0

4.9

t=1.2MAX

3.50

APPLICATION

For drive stage and output stage of power amplifiers in VHF/UHF

band portable radio sets.

1 : DRAIN

2 : SOURCE

3 : GATE

MARKING

INDEX

MARK

TYPE No.

LOT No.

ABSOLUTE MAXIMUM RATINGS (TC=25˚C, unless otherwise noted)

Ratings

Parameter

Drain to source voltage

Gate to source voltage

Channel dissipation

Junction temperature

Storage temperature

Conditions

Unit

Symbol

VDSS

VGSS

Pch

±10

Tc=25˚C

(Note2)

˚C

175

Tstg

-40 to +110

Note1: Above parameters are guaranteed independently.

2: Solder source pad on Copper Block(14´ 2.8´ 2mm)

ELECTRICAL CHARACTERISTICS (TC=25˚C, unless otherwise noted)

Limits

Typ

Symbol

Parameter

Test conditions

Unit

Min

1.0

Max

µA

VDS=17V, VGS=0V

VGS=10V, VDS=0V

VDS=7V, IDS=1mA

IDSS

IGSS

VTH

Ciss

Coss

1.7

Threshold voltage

VGS=10V, VDS=0V,f=1MHz

VDS=10V, VGS=0V,f=1MHz

Pout

VDS=7.2V, Pin=1W,f=450MHz

Note: Above parameters,ratings,limits and conditions are subject to change.

Nov. ´97

12 3

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