Document Number: MRF5S4140H
Rev. 2, 5/2006
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N-Channel Enhancement-Mode Lateral MOSFETs
MRF5S4140HR3
MRF5S4140HSR3
Designed for broadband commercial and industrial applications with frequen-
cies from 400 to 500 MHz. The high gain and broadband performance of these
devices make them ideal for large-signal, common-source amplifier applica-
tions in 28-volt base station equipment.
• Typical Single-Carrier N-CDMA Performance @ 465 MHz: VDD = 28 Volts,
465 MHz, 28 W AVG., 28 V
SINGLE N-CDMA
LATERAL N-CHANNEL
RF POWER MOSFETs
I
DQ = 1250 mA, Pout = 28 Watts Avg., IS-95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13). Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 21 dB
Drain Efficiency — 30%
ACPR @ 750 kHz Offset — -47.6 dBc in 30 kHz Bandwidth
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 465 MHz, 140 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
CASE 465-06, STYLE 1
NI-780
MRF5S4140HR3
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
CASE 465A-06, STYLE 1
NI-780S
MRF5S4140HSR3
Table 1. Maximum Ratings
Rating
Symbol
Value
Unit
Vdc
Vdc
Drain-Source Voltage
Gate-Source Voltage
V
DSS
-0.5, +65
-0.5, +15
V
GS
Total Device Dissipation @ T = 25°C
Derate above 25°C
P
D
427
2.4
W
W/°C
C
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
T
- 65 to +150
150
°C
°C
°C
stg
T
C
T
200
J
Table 2. Thermal Characteristics
(1,2)
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
Case Temperature 73°C, 140 W CW
Case Temperature 74°C, 28 W CW
R
°C/W
θ
JC
0.41
0.47
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF5S4140HR3 MRF5S4140HSR3
RF Device Data
Freescale Semiconductor
1