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935337372528

更新时间: 2024-11-25 21:17:35
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
17页 389K
描述
RF Power Field-Effect Transistor

935337372528 技术参数

生命周期:Active包装说明:,
Reach Compliance Code:unknown风险等级:5.64
Base Number Matches:1

935337372528 数据手册

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Document Number: A2V09H400--04N  
Rev. 1, 03/2017  
NXP Semiconductors  
Technical Data  
RF Power LDMOS Transistor  
N--Channel Enhancement--Mode Lateral MOSFET  
This 107 W asymmetrical Doherty RF power LDMOS transistor is designed  
for cellular base station applications covering the frequency range of 720 to  
960 MHz.  
A2V09H400--04NR3  
780 MHz  
720–960 MHz, 107 W AVG., 48 V  
AIRFAST RF POWER LDMOS  
TRANSISTOR  
Typical Doherty Single--Carrier W--CDMA Performance: VDD = 48 Vdc,  
IDQA = 688 mA, VGSB = 0.6 Vdc, Pout = 107 W Avg., Input Signal  
PAR = 9.9 dB @ 0.01% Probability on CCDF.  
G
Output PAR  
(dB)  
ACPR  
(dBc)  
ps  
D
Frequency  
733 MHz  
780 MHz  
821 MHz  
(dB)  
17.5  
18.0  
17.4  
(%)  
56.3  
55.8  
55.6  
7.2  
7.2  
6.9  
–31.3  
–36.4  
–35.0  
OM--780--4L  
PLASTIC  
Features  
Advanced high performance in--package Doherty  
Greater negative gate--source voltage range for improved Class C  
operation  
Carrier  
Designed for digital predistortion error correction systems  
RF /V  
RF /V  
outA DSA  
3
4
1
2
inA GSA  
RF /V  
inB GSB  
RF /V  
outB DSB  
Peaking  
(Top View)  
Note: Exposed backside of the package is  
the source terminal for the transistor.  
Figure 1. Pin Connections  
2016–2017 NXP B.V.  

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