Datasheet > 935337372528

935337372528

更新时间： 2024-09-21 21:17:35

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
17页	389K
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RF Power Field-Effect Transistor

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935337372528 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.64
Base Number Matches：	1

935337372528 数据手册

Document Number: A2V09H400--04N

Rev. 1, 03/2017

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 107 W asymmetrical Doherty RF power LDMOS transistor is designed

for cellular base station applications covering the frequency range of 720 to

960 MHz.

A2V09H400--04NR3

780 MHz

720–960 MHz, 107 W AVG., 48 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 48 Vdc,

I_DQA= 688 mA, V_GSB= 0.6 Vdc, P_out= 107 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR

(dB)

ACPR

(dBc)

Frequency

733 MHz

780 MHz

821 MHz

(dB)

17.5

18.0

17.4

(%)

56.3

55.8

55.6

7.2

6.9

–31.3

–36.4

–35.0

OM--780--4L

PLASTIC

Features



Advanced high performance in--package Doherty

Greater negative gate--source voltage range for improved Class C

operation

Carrier



Designed for digital predistortion error correction systems

RF /V

outA DSA

inA GSA

RF /V

inB GSB

RF /V

outB DSB

Peaking

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

 2016–2017 NXP B.V.

A2V09H400--04NR3

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...17

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