Datasheet > 935338749528

935338749528

更新时间： 2024-09-21 21:06:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
9页	219K
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RF Power Field-Effect Transistor

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935338749528 技术参数

生命周期：	Obsolete	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.6
Base Number Matches：	1

935338749528 数据手册

Document Number: A2T18S261W12N

Rev. 0, 11/2016

NXP Semiconductors

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 56 W RF power LDMOS transistor is designed for cellular base station

applications requiring very wide instantaneous bandwidth capability covering

the frequency range of 1805 to 1880 MHz.

A2T18S261W12NR3

1805–1880 MHz, 56 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR

1800 MHz



Typical Single--Carrier W--CDMA Performance: V_DD= 28 Vdc, I_DQ= 1500 mA,

_out= 56 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.



Output PAR ACPR

IRL

Frequency

1805 MHz

1840 MHz

1880 MHz

(dB)

17.7

18.1

18.2

(%)

34.2

34.1

34.8

(dB)

(dBc)

–35.1

–35.2

–34.6

(dB)

7.0

–15

–13

–10

7.1

Features

OM--880X--2L2L

PLASTIC



Designed for wide instantaneous bandwidth applications

Greater negative gate--source voltage range for improved Class C operation

Able to withstand extremely high output VSWR and broadband operating

conditions

(1)



Optimized for Doherty applications

VBW

RF /V

in GS

RF /V

out DS

(1)

VBW

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

1. Device can operate with V current

supplied through pin 2 and pin 4 as long

as the device’s average output power is

less than 90 watts.

 2016 NXP B.V.

A2T18S261W12NR3

RF Device Data

NXP Semiconductors

12 3 4 5 6 7...9

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