Datasheet > 935322425528

935322425528

更新时间： 2024-09-20 14:47:27

品牌	Logo	应用领域
恩智浦 - NXP		/
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17页	422K
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RF Power Field-Effect Transistor

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935322425528 技术参数

生命周期：	End Of Life	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.63
Base Number Matches：	1

935322425528 数据手册

Document Number: MHT1004N

Rev. 1, 8/2016

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistors

MHT1004N

MHT1004GN

N--Channel Enhancement--Mode Lateral MOSFETs

These 300 W CW high efficiency RF power transistors are designed for

consumer and commercial cooking applications operating in the 2450 MHz

ISM band.

Typical Performance: V = 32 Vdc, I = 100 mA

2450 MHz, 300 W CW, 32 V

RF POWER LDMOS TRANSISTORS

FOR CONSUMER AND

Frequency

(MHz)

(dB)

PAE

(%)

out

(W)

Signal Type

COMMERCIAL COOKING

2450

15.2

57.9

300

Load Mismatch/Ruggedness

Frequency

(W)

Test

Voltage

Signal Type

VSWR

(MHz)

Result

2450

> 5:1

at all Phase

Angles

15.0

(2 dB

Overdrive)

No Device

Degradation

OM--780--2L

PLASTIC

MHT1004N

Features

•

Characterized with series equivalent large--signal impedance parameters and

common source S--parameters

•

Internally matched for ease of use

Qualified for operation at 32 Vdc

Integrated ESD protection

150°C case operating temperature

225°C die temperature capability

OM--780G--2L

PLASTIC

MHT1004GN

Target Applications

•

Consumer cooking

Commercial cooking

Gate

Drain

(Top View)

Note: Exposed backside of the package is

the source terminal for the transistor.

Figure 1. Pin Connections

MHT1004N MHT1004GN

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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