Datasheet > 935320763128

935320763128

更新时间： 2024-09-20 21:20:11

品牌	Logo	应用领域
恩智浦 - NXP		/
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16页	534K
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RF Power Field-Effect Transistor

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935320763128 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
Base Number Matches：	1

935320763128 数据手册

Document Number: A2T20H330W24S

Rev. 0, 5/2015

Freescale Semiconductor

Technical Data

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET

This 58 W asymmetrical Doherty RF power LDMOS transistor is designed for

cellular base station applications requiring very wide instantaneous bandwidth

capability covering the frequency range of 1880 to 2025 MHz.

A2T20H330W24SR6



Typical Doherty Single--Carrier W--CDMA Performance: V_DD= 28 Vdc,

_DQA= 700 mA, V_GSB= 0.3 Vdc, P_out= 58 W Avg., Input Signal

PAR = 9.9 dB @ 0.01% Probability on CCDF.

1880–2025 MHz, 58 W AVG., 28 V

AIRFAST RF POWER LDMOS

TRANSISTOR



Output PAR

(dB)

ACPR

(dBc)

Frequency

1880 MHz

1960 MHz

2025 MHz

(dB)

16.5

16.9

16.3

(%)

50.9

50.5

50.1

7.9

7.8

–33.1

–36.0

–36.8

Features



Advanced High Performance In--Package Doherty

Designed for Wide Instantaneous Bandwidth Applications

Greater Negative Gate--Source Voltage Range for Improved Class C

Operation

NI--1230S--4L2L



Able to Withstand Extremely High Output VSWR and Broadband Operating

Conditions

Designed for Digital Predistortion Error Correction Systems

(2)

VBW

Carrier

RF /V

outA DSA

inA GSA

(1)

RF /V

inB GSB

RF /V

outB DSB

Peaking

(2)

VBW

(Top View)

Figure 1. Pin Connections

1. Pin connections 4 and 5 are DC coupled

and RF independent.

2. Device cannot operate with V current

supplied through pin 3 and pin 6.

A2T20H330W24SR6

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...16

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