Datasheet > 935314724528

935314724528

更新时间： 2024-09-17 20:00:15

品牌	Logo	应用领域
恩智浦 - NXP		电信电信集成电路
页数	文件大小	规格书
17页	778K
描述
RF and Baseband Circuit

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935314724528 技术参数

生命周期：	Active	Reach Compliance Code：	unknown
电信集成电路类型：	RF AND BASEBAND CIRCUIT	Base Number Matches：	1

935314724528 数据手册

Document Number: MD7IC2251N

Rev. 0, 5/2012

Freescale Semiconductor

Technical Data

RF LDMOS Wideband Integrated

Power Amplifiers

MD7IC2251NR1

MD7IC2251GNR1

The MD7IC2251N wideband integrated circuit is designed with on--chip

matching that makes it usable from 2110--2170 MHz. This multi--stage

structure is rated for 26 to 32 volt operation and covers all typical cellular

base station modulation formats.

•

Typical Doherty Single--Carrier W--CDMA Characterization Performance:

_DD= 28 Volts, I_DQ1(A+B)= 80 mA, I_DQ2A= 260 mA, V_GS2B= 1.4 Vdc,

2110--2170 MHz, 12 W AVG., 28 V

SINGLE W--CDMA

P_out= 12 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz,

Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF.

RF LDMOS WIDEBAND

INTEGRATED POWER AMPLIFIERS

PAE

(%)

Output PAR

(dB)

ACPR

(dBc)

Frequency

2110 MHz

2140 MHz

2170 MHz

(dB)

28.8

29.0

29.2

38.2

37.9

37.4

7.1

6.9

--34.6

--36.2

--36.1

TO--270 WB--14

PLASTIC

MD7IC2251NR1

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 2140 MHz, 63 Watts CW

Output Power (3 dB Input Overdrive from Rated P_out

Typical P_out@ 3 dB Compression Point ≃ 58 Watts ⁽¹⁾

)

TO--270 WB--14 GULL

PLASTIC

MD7IC2251GNR1

Features

•

100% PAR Tested for Guaranteed Output Power Capability

Production Tested in a Symmetrical Doherty Configuration

Characterized with Large--Signal Load--Pull Parameters and Common Source S--Parameters

On--Chip Matching (50 Ohm Input, DC Blocked)

Integrated Quiescent Current Temperature Compensation with Enable/Disable Function ⁽²⁾

Integrated ESD Protection

225°C Capable Plastic Package

In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13 inch Reel.

DS1A

Carrier

(3)

CARRIER

RF /V

DS1A

GS2A

inA

out1 DS2A

GS1A

RF /V

out1 DS2A

inA

GS1A

GS2A

Quiescent Current

Temperature Compensation

(2)

RF /V

out2 DS2B

inB

GS1B

GS2B

Quiescent Current

Temperature Compensation

GS1B

GS2B

12 Peaking

DS1B

(3)

PEAKING

RF /V

(Top View)

inB

out2 DS2B

Note: Exposed backside of the package is

the source terminal for the transistors.

DS1B

Figure 1. Functional Block Diagram

Figure 2. Pin Connections

1. P3dB =P +7.0 dB whereP

is the averageoutput power measured using an unclipped W--CDMA single--carrier input signal where output

avg

PAR is compressed to 7.0 dB @ 0.01% probability on CCDF.

2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control

for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/ApplicationNotes -- AN1977 orAN1987.

3. Peaking and Carrier orientation is determined by the test fixture design.

MD7IC2251NR1 MD7IC2251GNR1

RF Device Data

Freescale Semiconductor, Inc.

12 3 4 5 6 7...17

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