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934056284118 PDF预览

934056284118

更新时间: 2024-11-06 21:04:15
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
15页 307K
描述
TRANSISTOR 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3, FET General Purpose Power

934056284118 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.23
雪崩能效等级(Eas):110 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):26 A最大漏源导通电阻:0.06 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):106 A认证状态:Not Qualified
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

934056284118 数据手册

 浏览型号934056284118的Datasheet PDF文件第2页浏览型号934056284118的Datasheet PDF文件第3页浏览型号934056284118的Datasheet PDF文件第4页浏览型号934056284118的Datasheet PDF文件第5页浏览型号934056284118的Datasheet PDF文件第6页浏览型号934056284118的Datasheet PDF文件第7页 
BUK7560-100A;  
BUK7660-100A  
TrenchMOS™ standard level FET  
Rev. 01 — 22 February 2001  
Product specification  
1. Description  
N-channel enhancement mode field-effect power transistor in a plastic package using  
TrenchMOS™ technology, featuring very low on-state resistance.  
Product availability:  
BUK7560-100A in SOT78 (TO-220AB)  
BUK7660-100A in SOT404 (D2-PAK).  
2. Features  
TrenchMOS™ technology  
Q101 compliant  
175 °C rated  
Standard level compatible.  
3. Applications  
Automotive and general purpose power switching:  
12 V, 24 V and 42 V loads  
c
c
Motors, lamps and solenoids.  
4. Pinning information  
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
mb  
2
drain (d)  
d
s
3
source (s)  
mb  
mounting base;  
connected to drain (d)  
g
MBB076  
2
1
3
MBK116  
MBK106  
1
2 3  
SOT78 (TO-220AB)  
SOT404 (D2-PAK)  

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