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934047820118

更新时间: 2024-11-16 21:20:39
品牌 Logo 应用领域
恩智浦 - NXP 三端双向交流开关
页数 文件大小 规格书
6页 42K
描述
800V, 8A, 4 QUADRANT LOGIC LEVEL TRIAC, PLASTIC, D2PAK-3

934047820118 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:D2PAK包装说明:PLASTIC, D2PAK-3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.15
外壳连接:MAIN TERMINAL 2配置:SINGLE
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):250认证状态:Not Qualified
最大均方根通态电流:8 A断态重复峰值电压:800 V
表面贴装:YES端子面层:TIN
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:40触发设备类型:4 QUADRANT LOGIC LEVEL TRIAC
Base Number Matches:1

934047820118 数据手册

 浏览型号934047820118的Datasheet PDF文件第2页浏览型号934047820118的Datasheet PDF文件第3页浏览型号934047820118的Datasheet PDF文件第4页浏览型号934047820118的Datasheet PDF文件第5页浏览型号934047820118的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Triacs  
BT137B series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated triacs in a plastic envelope  
suitable for surface mounting, intended  
for use in applications requiring high  
bidirectional transient and blocking  
voltage capability and high thermal  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BT137B-  
BT137B-  
600  
800  
600F 800F  
BT137B- 600G 800G  
cycling  
performance.  
Typical  
VDRM  
Repetitive peak off-state  
voltages  
RMS on-state current  
Non-repetitive peak on-state  
current  
600  
800  
V
applications include motor control,  
industrial and domestic lighting, heating  
and static switching.  
IT(RMS)  
ITSM  
8
65  
8
65  
A
A
PINNING - SOT404  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
main terminal 1  
mb  
T2  
T1  
2
main terminal 2  
gate  
3
2
mb main terminal 2  
1
3
G
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
-600  
-800  
800  
VDRM  
Repetitive peak off-state  
voltages  
-
-
6001  
IT(RMS)  
ITSM  
RMS on-state current  
Non-repetitive peak  
on-state current  
full sine wave; Tmb 102 ˚C  
full sine wave; Tj = 25 ˚C prior to  
surge  
8
A
t = 20 ms  
-
-
-
65  
71  
21  
A
A
t = 16.7 ms  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
t = 10 ms  
A2s  
ITM = 12 A; IG = 0.2 A;  
dIG/dt = 0.2 A/µs  
T2+ G+  
-
50  
50  
50  
10  
2
5
5
0.5  
150  
125  
A/µs  
A/µs  
A/µs  
A/µs  
A
T2+ G-  
-
T2- G-  
-
T2- G+  
-
IGM  
Peak gate current  
Peak gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
VGM  
PGM  
PG(AV)  
Tstg  
Tj  
-
V
-
-
W
over any 20 ms period  
W
-40  
-
˚C  
˚C  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may  
switch to the on-state. The rate of rise of current should not exceed 6 A/µs.  
June 2001  
1
Rev 1.400  

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