Datasheet > 934049200118

934049200118

更新时间： 2024-09-30 04:15:15

品牌	Logo	应用领域
恩智浦 - NXP		三端双向交流开关
页数	文件大小	规格书
6页	43K
描述
4 Quadrant Logic Level TRIAC, 600V V(DRM), 8A I(T)RMS, PLASTIC, SC-63, DPAK-3

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934049200118 数据手册

Philips Semiconductors

Product specification

Triacs

BT137S series

GENERAL DESCRIPTION

QUICK REFERENCE DATA

Passivated triacs in a plastic envelope,

suitable for surface mounting, intended

for use in applications requiring high

bidirectional transient and blocking

voltage capability and high thermal

SYMBOL

PARAMETER

MAX. MAX. UNIT

BT137S-

600

800

BT137S- 600F 800F

BT137S- 600G 800G

cycling

performance.

Typical

V_DRM

Repetitive peak off-state

voltages

RMS on-state current

Non-repetitive peak on-state

current

600

800

applications include motor control,

industrial and domestic lighting, heating

and static switching.

I_T(RMS)

I_TSM

PINNING - SOT428

PIN CONFIGURATION

SYMBOL

DESCRIPTION

tab

MT1

MT2

gate

MT2

tab

LIMITING VALUES

Limiting values in accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

-600

-800

800

V_DRM

Repetitive peak off-state

voltages

600¹

I_T(RMS)

I_TSM

RMS on-state current

Non-repetitive peak

on-state current

full sine wave; T_mb≤ 102 ˚C

full sine wave; T_j= 25 ˚C prior to

surge

t = 20 ms

t = 16.7 ms

I²t

dI_T/dt

I²t for fusing

Repetitive rate of rise of

on-state current after

triggering

t = 10 ms

A²s

I_TM= 12 A; I_G= 0.2 A;

dI_G/dt = 0.2 A/µs

T2+ G+

0.5

150

125

A/µs

T2+ G-

T2- G-

T2- G+

I_GM

Peak gate current

Peak gate voltage

Peak gate power

Average gate power

Storage temperature

Operating junction

temperature

V_GM

P_GM

P_G(AV)

T_stg

T_j

over any 20 ms period

-40

˚C

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may

switch to the on-state. The rate of rise of current should not exceed 6 A/µs.

June 2001

Rev 1.400

12 3 4 5 6

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