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934042490112

更新时间： 2024-11-16 21:09:15
品牌 Logo 应用领域
恩智浦 - NXP 栅栅极
页数 文件大小 规格书
6页 45K
描述
Silicon Controlled Rectifier, 0.8 A, 600 V, SCR, TO-92, PLASTIC, SPT, SC-43, TO-92 VARIANT, 3 PIN

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934042490112 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred零件包装代码：TO-92
包装说明：CYLINDRICAL, O-PBCY-T3针数：3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.09其他特性：SENSITIVE GATE
配置：SINGLE最大直流栅极触发电流：0.2 mA
JEDEC-95代码：TO-92JESD-30 代码：O-PBCY-T3
JESD-609代码：e3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：ROUND封装形式：CYLINDRICAL
峰值回流温度（摄氏度）：250认证状态：Not Qualified
最大均方根通态电流：0.8 A断态重复峰值电压：600 V
重复峰值反向电压：600 V表面贴装：NO
端子面层：TIN端子形式：THROUGH-HOLE
端子位置：BOTTOM处于峰值回流温度下的最长时间：40
触发设备类型：SCRBase Number Matches：1

934042490112 数据手册

 浏览型号934042490112的Datasheet PDF文件第2页浏览型号934042490112的Datasheet PDF文件第3页浏览型号934042490112的Datasheet PDF文件第4页浏览型号934042490112的Datasheet PDF文件第5页浏览型号934042490112的Datasheet PDF文件第6页 
Philips Semiconductors  
Product specification  
Thyristors  
BT168 series  
logic level for RCD/ GFI/ LCCB applications  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Passivated, sensitive gate thyristors in a  
plastic envelope, intended for use in  
Residual Current Devices/ Ground Fault  
Interrupters/ Leakage Current Circuit  
Breakers (RCD/ GFI/ LCCB) applications  
where a minimum IGT limit is needed. These  
devices may be interfaced directly to  
microcontrollers, logic integrated circuits  
and other low power gate trigger circuits.  
SYMBOL  
PARAMETER  
MAX. MAX. UNIT  
BT168  
E
G
VDRM, VRRM  
IT(AV)  
Repetitive peak  
off-state voltages  
Average on-state  
current  
RMS on-state current  
Non-repetitive peak  
on-state current  
500  
600  
V
A
0.5  
0.5  
IT(RMS)  
ITSM  
0.8  
8
0.8  
8
A
A
PINNING - TO92 variant  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
anode  
a
k
2
gate  
3
cathode  
g
3
2 1  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
V
E
G
VDRM, VRRM Repetitive peak off-state  
voltages  
-
-
5001  
6001  
IT(AV)  
Average on-state current half sine wave;  
lead ≤ 83 ˚C  
RMS on-state current  
Non-repetitive peak  
on-state current  
0.5  
A
T
IT(RMS)  
ITSM  
all conduction angles  
t = 10 ms  
-
-
-
0.8  
8
9
A
A
A
t = 8.3 ms  
half sine wave;  
Tj = 25 ˚C prior to surge  
t = 10 ms  
I2t  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
-
0.32  
50  
A2s  
dIT/dt  
ITM = 2 A; IG = 10 mA;  
dIG/dt = 100 mA/µs  
A/µs  
IGM  
-
1
5
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
5
-
-
2
over any 20 ms period  
0.1  
150  
125  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
September 2001  
1
Rev 1.300  
123456

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