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934042970127

更新时间： 2024-11-16 18:28:19
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页数 文件大小 规格书
8页 64K
描述
Silicon Controlled Rectifier, 8 A, 500 V, SCR

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934042970127 技术参数

是否无铅： 不含铅是否Rohs认证： 符合
生命周期：Transferred包装说明：FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code：unknownHTS代码：8541.30.00.80
风险等级：5.08其他特性：SENSITIVE GATE
配置：SINGLE最大直流栅极触发电流：0.2 mA
JESD-30 代码：R-PSFM-T3元件数量：1
端子数量：3封装主体材料：PLASTIC/EPOXY
封装形状：RECTANGULAR封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED认证状态：Not Qualified
最大均方根通态电流：8 A断态重复峰值电压：500 V
重复峰值反向电压：500 V表面贴装：NO
端子形式：THROUGH-HOLE端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED触发设备类型：SCR
Base Number Matches：1

934042970127 数据手册

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Philips Semiconductors  
Product specification  
Thyristors  
logic level  
BT258 series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated, sensitive gate  
thyristors in a plastic envelope,  
intended for use in general purpose  
SYMBOL PARAMETER  
MAX. MAX. MAX. UNIT  
BT258- 500R 600R 800R  
switching  
and  
phase  
control  
VDRM  
VRRM  
IT(AV)  
,
Repetitive peak off-state  
500  
600  
800  
V
applications. These devices are  
intended to be interfaced directly to  
microcontrollers, logic integrated  
circuits and other low power gate  
trigger circuits.  
voltages  
Average on-state current  
RMS on-state current  
Non-repetitive peak on-state  
current  
5
8
75  
5
8
75  
5
8
75  
A
A
A
IT(RMS)  
ITSM  
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
cathode  
tab  
a
k
2
anode  
gate  
3
g
1 2 3  
tab anode  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-500R -600R -800R  
VDRM, VRRM Repetitive peak off-state  
voltages  
-
5001  
6001  
800  
V
IT(AV)  
IT(RMS)  
ITSM  
Average on-state current half sine wave; Tmb ≤ 111 ˚C  
-
-
5
8
A
A
RMS on-state current  
Non-repetitive peak  
on-state current  
all conduction angles  
half sine wave; Tj = 25 ˚C prior to  
surge  
t = 10 ms  
-
-
-
-
75  
82  
28  
50  
A
A
t = 8.3 ms  
t = 10 ms  
ITM = 10 A; IG = 50 mA;  
dIG/dt = 50 mA/µs  
I2t  
dIT/dt  
I2t for fusing  
Repetitive rate of rise of  
on-state current after  
triggering  
A2s  
A/µs  
IGM  
Peak gate current  
Peak gate voltage  
Peak reverse gate voltage  
Peak gate power  
Average gate power  
Storage temperature  
Operating junction  
temperature  
-
2
5
A
V
V
W
W
˚C  
˚C  
VGM  
VRGM  
PGM  
PG(AV)  
Tstg  
-
-
5
-
-
5
over any 20 ms period  
0.5  
150  
1252  
-40  
-
Tj  
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may  
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.  
2 Note: Operation above 110˚C may require the use of a gate to cathode resistor of 1kΩ or less.  
October 1997  
1
Rev 1.200  
12345678

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