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934041920118

更新时间： 2024-11-17 08:10:35
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
6页 48K
描述
Rectifier Diode, 1 Phase, 2 Element, 30A, 200V V(RRM), Silicon, PLASTIC, SMD, D2PAK-3

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934041920118 数据手册

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Philips Semiconductors  
Product specification  
Rectifier diodes  
ultrafast, rugged  
BYV42E series  
GENERAL DESCRIPTION  
QUICK REFERENCE DATA  
Glass passivated high efficiency  
rugged dual rectifier diodes in a  
plastic envelope, featuring low  
forward voltage drop, ultra-fast  
recovery times and soft recovery  
characteristic. These devices can  
withstand reverse voltage transients  
and have guaranteed reverse surge  
and ESD capability. They are  
intended for use in switched mode  
power supplies and high frequency  
circuits in general where low  
conduction and switching losses are  
essential.  
SYMBOL  
PARAMETER  
MAX. MAX. MAX. UNIT  
BYV42E-  
100  
100  
150  
150  
200  
200  
VRRM  
Repetitive peak reverse  
voltage  
Forward voltage  
Output current (both  
diodes conducting)  
Reverse recovery time  
Repetitive peak reverse  
current per diode  
V
VF  
IO(AV)  
0.85  
30  
0.85  
30  
0.85  
30  
V
A
trr  
IRRM  
28  
0.2  
28  
0.2  
28  
0.2  
ns  
A
PINNING - TO220AB  
PIN CONFIGURATION  
SYMBOL  
PIN  
1
DESCRIPTION  
anode 1 (a)  
tab  
a1  
a2  
2
cathode (k)  
anode 2 (a)  
3
k
tab cathode (k)  
1 2 3  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134).  
SYMBOL PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
-100  
100  
100  
100  
-150  
150  
150  
150  
-200  
200  
200  
200  
VRRM  
VRWM  
VR  
Repetitive peak reverse voltage  
-
-
-
V
V
V
Crest working reverse voltage  
Continuous reverse voltage1  
IO(AV)  
Output current (both diodes  
conducting)2  
square wave  
-
-
30  
27  
A
A
δ = 0.5; Tmb ≤ 108 ˚C  
sinusoidal  
a = 1.57; Tmb ≤ 111 ˚C  
IO(RMS)  
IFRM  
RMS forward current  
-
-
43  
30  
A
A
Repetitive peak forward current t = 25 µs; δ = 0.5;  
per diode  
Tmb ≤ 108 ˚C  
IFSM  
Non-repetitive peak forward  
current per diode  
t = 10 ms  
-
-
150  
160  
A
A
t = 8.3 ms  
sinusoidal; with reapplied  
VRWM(max)  
I2t  
IRRM  
I2t for fusing  
t = 10 ms  
-
-
112  
0.2  
A2s  
A
Repetitive peak reverse current tp = 2 µs; δ = 0.001  
per diode  
IRSM  
Non-repetitive peak reverse  
current per diode  
tp = 100 µs  
-
0.2  
A
Tstg  
Tj  
Storage temperature  
-40  
-
150  
150  
˚C  
˚C  
Operating junction temperature  
1 Tmb ≤ 144˚C for thermal stability.  
2 Neglecting switching and reverse current losses.  
For output currents in excess of 20 A, connection should be made to the exposed metal mounting base.  
October 1994  
1
Rev 1.100  
123456

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