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89LV1632RPQK-30 PDF预览

89LV1632RPQK-30

更新时间: 2024-02-17 00:24:33
品牌 Logo 应用领域
麦斯威 - MAXWELL 存储内存集成电路静态存储器
页数 文件大小 规格书
12页 199K
描述
16 Megabit (512K x 32-Bit) Low Voltage MCM SRAM

89LV1632RPQK-30 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:QFP包装说明:QFP,
针数:68Reach Compliance Code:compliant
ECCN代码:3A001.A.2.CHTS代码:8542.32.00.41
风险等级:5.84Is Samacsys:N
最长访问时间:30 nsJESD-30 代码:S-CQFP-G68
长度:37.9476 mm内存密度:16777216 bit
内存集成电路类型:SRAM MODULE内存宽度:32
功能数量:1端子数量:68
字数:524288 words字数代码:512000
工作模式:ASYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:512KX32
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:QFP
封装形状:SQUARE封装形式:FLATPACK
并行/串行:PARALLEL认证状态:Not Qualified
座面最大高度:6.1976 mm最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:GULL WING
端子节距:1.27 mm端子位置:QUAD
宽度:37.9476 mmBase Number Matches:1

89LV1632RPQK-30 数据手册

 浏览型号89LV1632RPQK-30的Datasheet PDF文件第5页浏览型号89LV1632RPQK-30的Datasheet PDF文件第6页浏览型号89LV1632RPQK-30的Datasheet PDF文件第7页浏览型号89LV1632RPQK-30的Datasheet PDF文件第9页浏览型号89LV1632RPQK-30的Datasheet PDF文件第10页浏览型号89LV1632RPQK-30的Datasheet PDF文件第11页 
89LV1632  
16 Megabit (512K x 32-Bit)Low Voltage MCM SRAM  
FIGURE 5. TIMING WAVEFORM OF WRITE CYCLE (2) (OE LOW FIIXED)  
FIGURE 6. TIMING WAVEFORM OF WRITE CYCLE (3) (CS CONTROLLED)  
1. All write cycle timing is referenced from the last valid address to the first transition address.  
2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low.  
A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end  
of write.  
3. tCW is measured from the later of CS going low to end of write.  
4. tAS is measured from the address valid to the beginning of write.  
5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high.  
6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase  
of the output must not be applied because bus contention can occur.  
7. For common I/O applications, minimization of elimination of bus contention conditions is necessary during read and write  
cycle.  
8. If CS foes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.  
9. DOUT is the read data of the new address.  
10.When CS is low, I/O pins are in the output state. The input signals in the opposite phase leading to the output should not  
be applied.  
08.18.05 REV 3  
All data sheets are subject to change without notice  
8
©2005 Maxwell Technologies.  
All rights reserved.  

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