Datasheet > 85HFR10M

85HFR10M

更新时间： 2024-09-16 06:33:19

品牌	Logo	应用领域
NAINA		二极管
页数	文件大小	规格书
1页	75K
描述
SILICON POWER DIODE

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中文翻译

获取价格

数据手册

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85HFR10M 数据手册

85HF / 85HFR

NAINA

SILICON POWER DIODE

DO-5

FEATURES

•

Diffused Series

Available in Normal & Reverse Polarity

Industrial Grade

POLARITY

Ø 4.0

Available In Avalanche Characteristic

* Available in metric and UNF thread

ELECTRICALSPECIFICATIONS

Reverse

Normal

17 A/F

11.5

M8 x 1.25

Maximum Average Forward

Current T=125⁰C

85A

1.4V

Ø 8.0

V_FM

I_FSM

I_FRM

Maximum peak forward

voltage drop @ Rated IF(AV)

Maximum peak one cycle

(non-rep) surge current 10 m sec

Maximum peak repetitive surge current

POLARITY

1270 A

405 A

Reverse

Normal

17 A/F

I t

Maximum I t rating (non-rep.) for 5 to 10

8064

11.5

M 8 x 1.25

msec.

Sec

THERMALMECHANICALSPECIFICATIONS

θ_JC

Maximum thermal resistance Junction to case

Operating Junction Temp.

Storage temperature

Mounting torque

(Non-lubricated threads)

Approx, weight

0.50⁰C/W

-65⁰C to 150⁰C

-65⁰C to 200⁰C

0.4 M-kg min,

0.6 M-kg max

13.5 & 30 gms.

Tstg

ELECTRICALRATINGS

TYPE

V_RRM

85HF/HFR

Max. repetitive peak reverse

voltage (v)

100

120

140

160

200 400 600

800 1000

1200 1400 1600

V_R(RMS) Max. R.M.S. reverse voltage(V)

140 280 420

200 400 600

560

700

840

980 1120

V_R

Max. D.C. Blocking Voltage (V)

100

800 1000

1200 1400 1600

Recommended R.M.S. working

Voltage(v)

160 240

320

200

400

200

480

200

560

200

640

200

I_R(AV)

Max. Average reverse leakage

200

200 200 200

current @ VRRM Tc 25⁰C uA

NAINA SEMICONDUCTOR LTD.,

D-95,SECTOR 63 NOIDA(INDIA)

e-mail: sales@nainasemi.com , web site: www.nainasemi.com

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