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854S01AKILF PDF预览

854S01AKILF

更新时间: 2024-02-12 13:59:11
品牌 Logo 应用领域
艾迪悌 - IDT 逻辑集成电路
页数 文件大小 规格书
17页 300K
描述
2:1 Differential-to-LVDS Multiplexer

854S01AKILF 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:VFQFPN
包装说明:HVQCCN, LCC16,.12SQ,20针数:16
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:1.27
系列:854JESD-30 代码:S-XQCC-N16
JESD-609代码:e3长度:3 mm
逻辑集成电路类型:MULTIPLEXER湿度敏感等级:3
功能数量:1输入次数:2
输出次数:1端子数量:16
最高工作温度:85 °C最低工作温度:-40 °C
输出极性:INVERTED封装主体材料:UNSPECIFIED
封装代码:HVQCCN封装等效代码:LCC16,.12SQ,20
封装形状:SQUARE封装形式:CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE
峰值回流温度(摄氏度):260电源:3.3 V
Prop。Delay @ Nom-Sup:0.6 ns传播延迟(tpd):0.6 ns
认证状态:Not Qualified座面最大高度:1 mm
子类别:Clock Drivers最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES温度等级:INDUSTRIAL
端子面层:Matte Tin (Sn) - annealed端子形式:NO LEAD
端子节距:0.5 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:3 mm
Base Number Matches:1

854S01AKILF 数据手册

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ICS854S01I Datasheet  
2:1 DIFFERENTIAL-TO-LVDS MULTIPLEXER  
Table 4D. LVDS DC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C  
Symbol Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
454  
Units  
mV  
mV  
V
VOD  
Differential Output Voltage  
247  
VOD  
VOS  
VOD Magnitude Change  
Offset Voltage  
50  
1.125  
1.375  
50  
VOS  
VOS Magnitude Change  
mV  
AC Electrical Characteristics  
Table 5. AC Characteristics, VDD = 3.3V ± 5%, TA = -40°C to 85°C  
Symbol  
Parameter  
Test Conditions  
Minimum  
Typical  
Maximum  
Units  
fOUT  
Output Frequency  
2.5  
GHz  
Propagation Delay;  
NOTE 1  
tPD  
250  
400  
600  
ps  
ps  
ps  
Buffer Additive Phase Jitter,  
RMS; refer to Additive Phase  
Jitter Section  
155.52MHz, Integration Range:  
12kHz – 20MHz)  
tjit  
0.06  
Part-to-Part Skew;  
NOTE 2, 3  
tsk(pp)  
350  
tR / tF  
odc  
Output Rise/Fall Time  
Output Duty Cycle  
20% to 80%  
100  
49  
275  
51  
ps  
%
MUX Isolation;  
NOTE 4  
fOUT = 155.52MHz, VPP  
400mV  
=
MUX_ISOLATION  
86  
dB  
NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device  
is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal  
equilibrium has been reached under these conditions.  
NOTE: All parameters measured at 1.0GHz unless otherwise noted.  
NOTE 1: Measured from the differential input crossing point to the differential output crossing point.  
NOTE 2: Defined as skew between outputs on different devices operating at the same supply voltage, same temperature, same frequency  
and  
with equal load conditions. Using the same type of inputs on each device, the outputs are measured  
at the differential cross points.  
NOTE 3: This parameter is defined in accordance with JEDEC Standard 65.  
NOTE 4: Q, nQ outputs measured differentially. See Parameter Measurement Information to MUX Isolation diagram.  
ICS854S01AKI June 15, 2017  
4
©2017 Integrated Device Technology, Inc.  

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