79C2040B
20 Megabit (512K x 40-Bit)
EEPROM MCM
Logic Diagram
DESCRIPTION:
FEATURES:
Maxwell Technologies’ 79C2040B multi-chip module (MCM)
memory features a greater than 100 krad (Si) total dose toler-
ance, dependent upon orbit. Using Maxwell Technologies’ pat-
ented radiation-hardened RAD-PAK® MCM packaging
technology, the 79C2040B is the first radiation-hardened 20
megabit MCM EEPROM for space application. The 79C2040B
uses twenty 1 Megabit high speed CMOS die to yield a 20
megabit product. The 79C2040B is capable of in-system elec-
trical byte and page programmability. It has a 128 word page
programming function to make the erase and write operations
faster. It also features Data Polling and a Ready/Busy signal to
indicate the completion of erase and programming operations.
In the 79C2040B, hardware data protection is provided with
the RES pin, in addition to noise protection on the WE signal
and write inhibit on power on and off. Software data protection
is implemented using the JEDEC optional standard algorithm.
512k x 40-bit EEPROM MCM
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RAD-PAK® radiation-hardened against natural
space radiation
Total dose hardness:
- >100 krad (Si)
- Dependent upon orbit
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Excellent Single event effects @ 25°C
- SELTH > 120 MeV cm2/mg (Device)
- SEUTH > 90 MeV cm2/mg(Memory Cells)
- SEU TH > 18 MeV cm2/mg (Write Mode)
- SETTH > 40 MeV cm2/mg (Read Mode)
High endurance
- 10,000 cycles/byte (Page Programming Mode)
- 10 year data retention
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Page Write Mode: 128 Dword Page
High Speed:
Maxwell Technologies' patented RAD-PAK® packaging technol-
ogy incorporates radiation shielding in the microcircuit pack-
age. It eliminates the need for box shielding while providing
the required radiation shielding for a lifetime in orbit or space
mission. In a GEO orbit, RAD-PAK® provides greater than 100
krad (Si) radiation dose tolerance. This product is available
with screening up to Maxwell Technologies’ self-defined Class
K
- 150 and 200 ns maximum access times
Automatic programming
- 10 ms automatic Page/Dword write
Low power dissipation
- 375 mW/MHz active current
- 3. 2 mW standby current
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09.15.15 Rev 4
1
All data sheets are subject to change without notice
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