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74LVC2G241DC PDF预览

74LVC2G241DC

更新时间: 2023-09-03 20:33:42
品牌 Logo 应用领域
安世 - NEXPERIA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
18页 269K
描述
Dual buffer/line driver; 3-stateProduction

74LVC2G241DC 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:VSSOP,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.13
其他特性:OUTPUT ENABLE ACTIVE HIGH FOR ONE FUNCTION系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
长度:2.3 mm逻辑集成电路类型:BUS DRIVER
湿度敏感等级:1位数:1
功能数量:2端口数量:2
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:VSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
传播延迟(tpd):11 ns认证状态:Not Qualified
座面最大高度:1 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):1.65 V标称供电电压 (Vsup):2.3 V
表面贴装:YES技术:CMOS
温度等级:AUTOMOTIVE端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
宽度:2 mmBase Number Matches:1

74LVC2G241DC 数据手册

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74LVC2G241  
Dual buffer/line driver; 3-state  
Rev. 16 — 31 July 2019  
Product data sheet  
1. General description  
The 74LVC2G241 is a dual non-inverting buffer/line driver with 3-state outputs. The 3-state outputs  
are controlled by the output enable inputs 1OE and 2OE:  
A HIGH level at pin 1OE causes output 1Y to assume a high-impedance OFF-state.  
A LOW level at pin 2OE causes output 2Y to assume a high-impedance OFF-state.  
Schmitt trigger action at all inputs makes the circuit highly tolerant of slower input rise and fall  
times.  
Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of the  
74LVC2G241 as a translator in a mixed 3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry  
disables the output, preventing a damaging backflow current through the device when it is powered  
down.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant input/output for interfacing with 5 V logic  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8-B/JESD36 (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
±24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Inputs accept voltages up to 5 V  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C  
 
 

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