5秒后页面跳转
74LVC1G58GS PDF预览

74LVC1G58GS

更新时间: 2023-09-03 20:26:32
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
18页 266K
描述
Low-power configurable multiple function gateProduction

74LVC1G58GS 数据手册

 浏览型号74LVC1G58GS的Datasheet PDF文件第4页浏览型号74LVC1G58GS的Datasheet PDF文件第5页浏览型号74LVC1G58GS的Datasheet PDF文件第6页浏览型号74LVC1G58GS的Datasheet PDF文件第8页浏览型号74LVC1G58GS的Datasheet PDF文件第9页浏览型号74LVC1G58GS的Datasheet PDF文件第10页 
Nexperia  
74LVC1G58  
Low-power configurable multiple function gate  
Symbol Parameter  
Conditions  
Min  
Typ [1]  
Max  
Unit  
Tamb = -40 °C to +125 °C  
VOL  
LOW-level output voltage  
VI = VT+ or VT-  
IO = 100 μA; VCC = 1.65 V to 5.5 V  
IO = 4 mA; VCC = 1.65 V  
IO = 8 mA; VCC = 2.3 V  
-
-
-
-
-
-
-
-
-
-
-
-
0.1  
0.7  
V
V
V
V
V
V
0.45  
0.6  
IO = 12 mA; VCC = 2.7 V  
IO = 24 mA; VCC = 3.0 V  
IO = 32 mA; VCC = 4.5 V  
VI = VT+ or VT-  
0.8  
0.8  
VOH  
HIGH-level output voltage  
IO = -100 μA; VCC = 1.65 V to 5.5 V  
IO = -4 mA; VCC = 1.65 V  
IO = -8 mA; VCC = 2.3 V  
IO = -12 mA; VCC = 2.7 V  
IO = -24 mA; VCC = 3.0 V  
IO = -32 mA; VCC = 4.5 V  
VI = 5.5 V or GND; VCC = 0 V to 5.5 V  
VI or VO = 5.5 V; VCC = 0 V  
VCC - 0.1  
-
-
-
-
-
-
-
-
-
-
-
V
0.95  
1.7  
1.9  
2.0  
3.4  
-
V
-
V
-
V
-
V
-
V
II  
input leakage current  
power-off leakage current  
supply current  
±1  
±2  
4
μA  
μA  
μA  
IOFF  
ICC  
-
VI = 5.5 V or GND; VCC = 1.65 V to 5.5 V;  
IO = 0 A  
-
ΔICC  
additional supply current  
VI = VCC - 0.6 V; IO = 0 A;  
VCC = 2.3 V to 5.5 V  
-
-
500  
μA  
[1] Typical values are measured at maximum VCC and Tamb = 25 °C.  
11. Dynamic characteristics  
Table 9. Dynamic characteristics  
Voltages are referenced to GND (ground = 0 V); for test circuit see Fig. 13.  
Symbol Parameter  
Conditions  
-40 °C to +85 °C  
-40 °C to +125 °C Unit  
Min  
Typ [1] Max  
Min  
Max  
tpd  
propagation delay  
A, B, C to Y; see Fig. 12  
VCC = 1.65 V to 1.95 V  
VCC = 2.3 V to 2.7 V  
VCC = 2.7 V  
[2]  
1.0  
0.5  
0.5  
0.5  
0.5  
-
6.0  
3.5  
4.2  
3.8  
3.0  
20  
14.4  
8.3  
8.5  
6.3  
5.1  
-
1.0  
0.5  
0.5  
0.5  
0.5  
-
18.0  
10.4  
10.6  
7.9  
6.4  
-
ns  
ns  
ns  
ns  
ns  
pF  
VCC = 3.0 V to 3.6 V  
VCC = 4.5 V to 5.5 V  
VCC = 3.3 V; VI = GND to VCC  
CPD  
power dissipation  
capacitance  
[3]  
[1] Typical values are measured at nominal VCC and at Tamb = 25 °C.  
[2] tpd is the same as tPLH and tPHL  
.
[3] CPD is used to determine the dynamic power dissipation (PD in μW).  
PD = CPD × VCC 2 × fi × N + Σ(CL × VCC 2 × fo) where:  
fi = input frequency in MHz;  
fo = output frequency in MHz;  
CL = output load capacitance in pF;  
VCC = supply voltage in V;  
N = number of inputs switching;  
Σ(CL × VCC 2 × fo) = sum of outputs.  
©
74LVC1G58  
All information provided in this document is subject to legal disclaimers.  
Nexperia B.V. 2022. All rights reserved  
Product data sheet  
Rev. 11 — 1 February 2022  
7 / 18  
 
 

与74LVC1G58GS相关器件

型号 品牌 描述 获取价格 数据表
74LVC1G58GV NXP Low-power configurable multiple function gate

获取价格

74LVC1G58GV NEXPERIA Low-power configurable multiple function gateProduction

获取价格

74LVC1G58GV-Q100 NXP IC SPECIALTY LOGIC CIRCUIT, Logic IC:Other

获取价格

74LVC1G58GV-Q100 NEXPERIA Low-power configurable multiple function gateProduction

获取价格

74LVC1G58GW NXP Low-power configurable multiple function gate

获取价格

74LVC1G58GW NEXPERIA Low-power configurable multiple function gateProduction

获取价格