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74LVC1G18GW-Q100 PDF预览

74LVC1G18GW-Q100

更新时间: 2024-11-18 19:54:31
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
14页 105K
描述
IC MULTIPLEXER AND DEMUX/DECODER, Multiplexer/Demultiplexer

74LVC1G18GW-Q100 技术参数

生命周期:Transferred零件包装代码:SOT-363
包装说明:TSSOP,针数:6
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.63系列:LVC/LCX/Z
JESD-30 代码:R-PDSO-G6长度:2 mm
逻辑集成电路类型:MULTIPLEXER AND DEMUX/DECODER功能数量:1
输入次数:1输出次数:2
端子数量:6最高工作温度:125 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH传播延迟(tpd):12.5 ns
筛选级别:AEC-Q100座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):1.65 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:1.5 mm
Base Number Matches:1

74LVC1G18GW-Q100 数据手册

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74LVC1G18-Q100  
1-of-2 non-inverting demultiplexer with 3-state deselected  
output  
Rev. 1 — 16 May 2013  
Product data sheet  
1. General description  
The 74LVC1G18-Q100 is a 1-of-2 non-inverting demultiplexer with a 3-state output. The  
device buffers the data on input pin A. It is passed to either output 1Y or 2Y, depending on  
whether the state of the select input (pin S) is LOW or HIGH. Input can be driven from  
either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed  
3.3 V and 5 V environment.  
This device is fully specified for partial power-down applications using IOFF. The IOFF  
circuitry disables the output, preventing the damaging backflow current through the device  
when it is powered down.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Wide supply voltage range from 1.65 V to 5.5 V  
5 V tolerant input/output for interfacing with 5 V logic  
High noise immunity  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8B/JESD36 (2.7 V to 3.6 V)  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
24 mA output drive (VCC = 3.0 V)  
CMOS low power consumption  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
SOT363 and SOT457 package  

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