NXP Semiconductors
74HC1G00-Q100; 74HCT1G00-Q100
2-input NAND gate
Table 7.
Static characteristics …continued
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol
Parameter
Conditions
40 C to +85 C
Min Typ Max
40 C to +125 C Unit
Min Max
ICC
ICC
CI
supply current
VI = VCC or GND; IO = 0 A;
VCC = 5.5 V
-
-
-
10
500
-
-
-
-
20
A
A
pF
additional supply
current
per input; VCC = 4.5 V to 5.5 V;
VI = VCC 2.1 V; IO = 0 A
-
850
-
input capacitance
- 1.5
11. Dynamic characteristics
Table 8.
Dynamic characteristics
GND = 0 V; tr = tf 6.0 ns; All typical values are measured at Tamb = 25 C. For test circuit, see Figure 6
Symbol Parameter
Conditions
40 C to +85 C
Min Typ Max
40 C to +125 C Unit
Min
Max
For type 74HC1G00-Q100
[1]
tpd
propagation delay A and B to Y; see Figure 5
VCC = 2.0 V; CL = 50 pF
-
-
-
-
-
25
115
23
-
-
-
-
-
135
ns
ns
ns
ns
pF
VCC = 4.5 V; CL = 50 pF
9
27
-
VCC = 5.0 V; CL = 15 pF
7
VCC = 6.0 V; CL = 50 pF
8
20
-
23
[2]
[1]
CPD
power dissipation VI = GND to VCC
capacitance
19
-
-
-
-
For type 74HCT1G00-Q100
tpd
propagation delay A and B to Y; see Figure 5
VCC = 4.5 V; CL = 50 pF
VCC = 5.0 V; CL = 15 pF
-
-
-
12
10
21
24
-
-
-
27
-
ns
ns
pF
[2]
CPD
power dissipation VI = GND to VCC 1.5 V
-
capacitance
[1] tpd is the same as tPLH and tPHL
.
[2] CPD is used to determine the dynamic power dissipation PD (W).
PD = CPD VCC2 fi + (CL VCC2 fo) where:
fi = input frequency in MHz; fo = output frequency in MHz
CL = output load capacitance in pF
VCC = supply voltage in Volts
(CL VCC2 fo) = sum of outputs
74HC_HCT1G00_Q100
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 16 September 2013
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