NXP Semiconductors
74HC1G00-Q100; 74HCT1G00-Q100
2-input NAND gate
10. Static characteristics
Table 7.
Static characteristics
Voltages are referenced to GND (ground = 0 V). All typical values are measured at Tamb = 25 C.
Symbol
Parameter
Conditions
40 C to +85 C
Min Typ Max
40 C to +125 C Unit
Min Max
For type 74HC1G00-Q100
VIH
HIGH-level input
voltage
VCC = 2.0 V
1.5
1.2
-
1.5
-
V
V
V
V
V
V
VCC = 4.5 V
3.15
2.4
3.2
0.8
2.1
2.8
-
3.15
-
VCC = 6.0 V
4.2
-
4.2
-
VIL
LOW-level input
voltage
VCC = 2.0 V
-
-
-
0.5
1.35
1.8
-
-
-
0.5
VCC = 4.5 V
1.35
1.8
VCC = 6.0 V
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = 20 A; VCC = 2.0 V
IO = 20 A; VCC = 4.5 V
IO = 20 A; VCC = 6.0 V
IO = 2.0 mA; VCC = 4.5 V
IO = 2.6 mA; VCC = 6.0 V
VI = VIH or VIL
1.9
2.0
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
4.4
4.5
5.9
6.0
4.13
5.63
4.32
5.81
VOL
LOW-level output
voltage
IO = 20 A; VCC = 2.0 V
IO = 20 A; VCC = 4.5 V
IO = 20 A; VCC = 6.0 V
IO = 2.0 mA; VCC = 4.5 V
IO = 2.6 mA; VCC = 6.0 V
-
-
-
-
-
-
-
0
0
0
0.1
0.1
0.1
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
1.0
20
V
V
V
0.15 0.33
0.16 0.33
V
V
II
input leakage current VI = VCC or GND; VCC = 6.0 V
-
-
1.0
10
A
A
ICC
supply current
VI = VCC or GND; IO = 0 A;
VCC = 6.0 V
CI
input capacitance
- 1.5
-
-
-
pF
For type 74HCT1G00-Q100
VIH
HIGH-level input
voltage
VCC = 4.5 V to 5.5 V
VCC = 4.5 V to 5.5 V
2.0
-
1.6
1.2
-
2.0
-
-
V
V
VIL
LOW-level input
voltage
0.8
0.8
VOH
HIGH-level output
voltage
VI = VIH or VIL
IO = 20 A; VCC = 4.5 V
IO = 2.0 mA; VCC = 4.5 V
VI = VIH or VIL
4.4
4.5
-
-
4.4
3.7
-
-
V
V
4.13
4.32
VOL
LOW-level output
voltage
IO = 20 A; VCC = 4.5 V
IO = 2.0 mA; VCC = 4.5 V
-
-
-
0
0.1
-
-
-
0.1
0.4
1.0
V
0.15 0.33
1.0
V
II
input leakage current VI = VCC or GND; VCC = 5.5 V
-
A
74HC_HCT1G00_Q100
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© NXP B.V. 2013. All rights reserved.
Product data sheet
Rev. 1 — 16 September 2013
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