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74HC05BQ-Q100,115 PDF预览

74HC05BQ-Q100,115

更新时间: 2024-11-18 14:47:03
品牌 Logo 应用领域
恩智浦 - NXP /
页数 文件大小 规格书
15页 275K
描述
74HC05-Q100 - Hex inverter with open-drain outputs QFN 14-Pin

74HC05BQ-Q100,115 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:QFN包装说明:2.50 X 3 MM, 0.85 MM HEIGHT, PLASTIC, MO-241, SOT762-1, DHVQFN-14
针数:14Reach Compliance Code:compliant
风险等级:5.78Base Number Matches:1

74HC05BQ-Q100,115 数据手册

 浏览型号74HC05BQ-Q100,115的Datasheet PDF文件第2页浏览型号74HC05BQ-Q100,115的Datasheet PDF文件第3页浏览型号74HC05BQ-Q100,115的Datasheet PDF文件第4页浏览型号74HC05BQ-Q100,115的Datasheet PDF文件第5页浏览型号74HC05BQ-Q100,115的Datasheet PDF文件第6页浏览型号74HC05BQ-Q100,115的Datasheet PDF文件第7页 
74HC05-Q100  
Hex inverter with open-drain outputs  
Rev. 1 — 9 July 2012  
Product data sheet  
1. General description  
The 74HC05-Q100 is a high-speed Si-gate CMOS device that complies with JEDEC  
standard no. 7A.  
The 74HC05-Q100 contains six inverters. The outputs of the 74HC05-Q100 are  
open-drain and can be connected to other open-drain outputs to implement active-LOW  
wired-OR or active-HIGH wired-AND functions. The open-drain outputs require pull-up  
resistors to perform correctly.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Wide operating voltage 2.0 V to 6.0 V  
Input levels:  
For 74HC05-Q100: CMOS level  
Latch-up performance exceeds 100 mA per JESD 78 Class II level A  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pf, R = 0 )  
Multiple package options  
 
 

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