是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOIC |
包装说明: | 3.90 MM, PLASTIC, MO-012, SOT-108-1, SO-14 | 针数: | 14 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.03 |
Is Samacsys: | N | 系列: | HC/UH |
JESD-30 代码: | R-PDSO-G14 | JESD-609代码: | e4 |
长度: | 8.65 mm | 负载电容(CL): | 50 pF |
逻辑集成电路类型: | AND GATE | 最大I(ol): | 0.004 A |
湿度敏感等级: | 1 | 功能数量: | 4 |
输入次数: | 2 | 端子数量: | 14 |
最高工作温度: | 125 °C | 最低工作温度: | -40 °C |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | SOP |
封装等效代码: | SOP14,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 包装方法: | TUBE |
峰值回流温度(摄氏度): | 260 | 电源: | 2/6 V |
Prop。Delay @ Nom-Sup: | 27 ns | 传播延迟(tpd): | 135 ns |
认证状态: | Not Qualified | 施密特触发器: | NO |
座面最大高度: | 1.75 mm | 子类别: | Gates |
最大供电电压 (Vsup): | 6 V | 最小供电电压 (Vsup): | 2 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | AUTOMOTIVE |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子节距: | 1.27 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 3.9 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
74HC08D,653 | NXP |
类似代替 |
74HC(T)08 - Quad 2-input AND gate SOIC 14-Pin | |
74HC08D,652 | NXP |
类似代替 |
74HC(T)08 - Quad 2-input AND gate SOIC 14-Pin | |
74HC08N | NXP |
类似代替 |
Quad 2-input AND gate |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
74HC08D,652 | NXP |
获取价格 |
74HC(T)08 - Quad 2-input AND gate SOIC 14-Pin | |
74HC08D,653 | NXP |
获取价格 |
74HC(T)08 - Quad 2-input AND gate SOIC 14-Pin | |
74HC08DB | NXP |
获取价格 |
Quad 2-input AND gate | |
74HC08DB,112 | NXP |
获取价格 |
74HC(T)08 - Quad 2-input AND gate SSOP1 14-Pin | |
74HC08D-Q100 | NEXPERIA |
获取价格 |
Quad 2-input AND gate | |
74HC08DR2G | ONSEMI |
获取价格 |
Quad 2−Input AND Gate High−Performance Silicon−Gate CMOS | |
74HC08D-T | ETC |
获取价格 |
Quad 2-input AND Gate | |
74HC08DTR2G | ONSEMI |
获取价格 |
Quad 2−Input AND Gate High−Performance Silicon−Gate CMOS | |
74HC08N | NXP |
获取价格 |
Quad 2-input AND gate | |
74HC08N,652 | NXP |
获取价格 |
74HC08N |