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74AUP2G241GT PDF预览

74AUP2G241GT

更新时间: 2024-11-12 11:10:39
品牌 Logo 应用领域
安世 - NEXPERIA 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
21页 304K
描述
Low-power dual buffer/line driver; 3-stateProduction

74AUP2G241GT 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:VSON,Reach Compliance Code:compliant
HTS代码:8542.39.00.01风险等级:5.62
系列:AUP/ULP/VJESD-30 代码:R-PDSO-N8
JESD-609代码:e3长度:1.95 mm
逻辑集成电路类型:BUS DRIVER湿度敏感等级:1
位数:1功能数量:2
端口数量:2端子数量:8
最高工作温度:125 °C最低工作温度:-40 °C
输出特性:3-STATE输出极性:TRUE
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, VERY THIN PROFILE
峰值回流温度(摄氏度):260传播延迟(tpd):24 ns
认证状态:Not Qualified座面最大高度:0.5 mm
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):0.8 V
标称供电电压 (Vsup):1.1 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Tin (Sn)端子形式:NO LEAD
端子节距:0.5 mm端子位置:DUAL
处于峰值回流温度下的最长时间:30宽度:1 mm

74AUP2G241GT 数据手册

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74AUP2G241  
Low-power dual buffer/line driver; 3-state  
Rev. 9 — 1 December 2020  
Product data sheet  
1. General description  
The 74AUP2G241 provides a dual non-inverting buffer/line driver with 3-state outputs. The 3-state  
outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at pin 1OE causes  
output 1Y to assume a high-impedance OFF-state. A LOW level at pin 2OE causes output 2Y to  
assume a high-impedance OFF-state.  
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times  
across the entire VCC range from 0.8 V to 3.6 V.  
This device ensures a very low static and dynamic power consumption across the entire VCC range  
from 0.8 V to 3.6 V.  
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry  
disables the output, preventing the damaging backflow current through the device when it is  
powered down.  
This device has an input-disable feature, which allows floating input signals. The input 1A is  
disabled when the output enable input 1OE is HIGH. The input 2A is disabled when the output  
enable input 2OE is LOW.  
2. Features and benefits  
Wide supply voltage range from 0.8 V to 3.6 V  
High noise immunity  
Complies with JEDEC standards:  
JESD8-12 (0.8 V to 1.3 V)  
JESD8-11 (0.9 V to 1.65 V)  
JESD8-7 (1.2 V to 1.95 V)  
JESD8-5 (1.8 V to 2.7 V)  
JESD8-B (2.7 V to 3.6 V)  
ESD protection:  
HBM JESD22-A114F Class 3A exceeds 5000 V  
MM JESD22-A115-A exceeds 200 V  
CDM JESD22-C101E exceeds 1000 V  
Low static power consumption; ICC = 0.9 μA (maximum)  
Latch-up performance exceeds 100 mA per JESD 78 Class II  
Inputs accept voltages up to 3.6 V  
Low noise overshoot and undershoot < 10 % of VCC  
Input-disable feature allows floating input conditions  
IOFF circuitry provides partial Power-down mode operation  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C  
 
 

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