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74AHC2G241DP-Q100 PDF预览

74AHC2G241DP-Q100

更新时间: 2024-11-16 15:31:47
品牌 Logo 应用领域
恩智浦 - NXP 驱动光电二极管逻辑集成电路
页数 文件大小 规格书
16页 147K
描述
IC DRIVER, Bus Driver/Transceiver

74AHC2G241DP-Q100 技术参数

生命周期:Transferred零件包装代码:SOIC
包装说明:TSSOP,针数:8
Reach Compliance Code:unknownHTS代码:8542.39.00.01
风险等级:5.63系列:AHC/VHC/H/U/V
JESD-30 代码:S-PDSO-G8长度:3 mm
逻辑集成电路类型:BUS DRIVER位数:1
功能数量:2端口数量:2
端子数量:8最高工作温度:125 °C
最低工作温度:-40 °C输出特性:3-STATE
输出极性:TRUE封装主体材料:PLASTIC/EPOXY
封装代码:TSSOP封装形状:SQUARE
封装形式:SMALL OUTLINE, THIN PROFILE, SHRINK PITCH传播延迟(tpd):14.5 ns
筛选级别:AEC-Q100座面最大高度:1.1 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子形式:GULL WING端子节距:0.65 mm
端子位置:DUAL宽度:3 mm
Base Number Matches:1

74AHC2G241DP-Q100 数据手册

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74AHC2G241-Q100;  
74AHCT2G241-Q100  
Dual buffer/line driver; 3-state  
Rev. 1 — 12 November 2013  
Product data sheet  
1. General description  
The 74AHC2G241-Q100 and 74AHCT2G241-Q100 are high-speed Si-gate CMOS  
devices. They provide a dual non-inverting buffer/line driver with 3-state outputs. The  
3-state outputs are controlled by the output enable inputs 1OE and 2OE. A HIGH level at  
pin 1OE causes output 1Y to assume a high-impedance OFF-state. A LOW level at  
pin 2OE causes output 2Y to assume a high-impedance OFF-state. Schmitt-trigger action  
at all inputs makes the circuit highly tolerant for slower input rise and fall times.  
The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.  
The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.  
This product has been qualified to the Automotive Electronics Council (AEC) standard  
Q100 (Grade 1) and is suitable for use in automotive applications.  
2. Features and benefits  
Automotive product qualification in accordance with AEC-Q100 (Grade 1)  
Specified from 40 C to +85 C and from 40 C to +125 C  
Symmetrical output impedance  
High noise immunity  
Low power dissipation  
Balanced propagation delays  
Multiple package options  
ESD protection:  
MIL-STD-883, method 3015 exceeds 2000 V  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V (C = 200 pF, R = 0 )  
 
 

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