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74LVC1G00GV PDF预览

74LVC1G00GV

更新时间: 2024-01-18 11:12:24
品牌 Logo 应用领域
安世 - NEXPERIA 光电二极管逻辑集成电路
页数 文件大小 规格书
16页 251K
描述
Single 2-input NAND gateProduction

74LVC1G00GV 技术参数

是否Rohs认证: 符合生命周期:Transferred
包装说明:TSOP, TSOP5/6,.11,37Reach Compliance Code:unknown
风险等级:5.73JESD-30 代码:R-PDSO-G5
JESD-609代码:e3负载电容(CL):50 pF
逻辑集成电路类型:NAND GATE最大I(ol):0.024 A
湿度敏感等级:1端子数量:5
最高工作温度:125 °C最低工作温度:-40 °C
封装主体材料:PLASTIC/EPOXY封装代码:TSOP
封装等效代码:TSOP5/6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE电源:3.3 V
Prop。Delay @ Nom-Sup:6 ns认证状态:Not Qualified
施密特触发器:NO子类别:Gates
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:AUTOMOTIVE
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子节距:0.95 mm端子位置:DUAL
Base Number Matches:1

74LVC1G00GV 数据手册

 浏览型号74LVC1G00GV的Datasheet PDF文件第2页浏览型号74LVC1G00GV的Datasheet PDF文件第3页浏览型号74LVC1G00GV的Datasheet PDF文件第4页浏览型号74LVC1G00GV的Datasheet PDF文件第5页浏览型号74LVC1G00GV的Datasheet PDF文件第6页浏览型号74LVC1G00GV的Datasheet PDF文件第7页 
74LVC1G00  
Single 2-input NAND gate  
Rev. 13 — 8 February 2022  
Product data sheet  
1. General description  
The 74LVC1G00 is a single 2-input NAND gate. Inputs can be driven from either 3.3 V or 5 V  
devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V  
environments. Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and  
fall times. This device is fully specified for partial power down applications using IOFF. The IOFF  
circuitry disables the output, preventing the potentially damaging backflow current through the  
device when it is powered down.  
2. Features and benefits  
Wide supply voltage range from 1.65 V to 5.5 V  
Overvoltage tolerant inputs to 5.5 V  
High noise immunity  
CMOS low power dissipation  
IOFF circuitry provides partial Power-down mode operation  
±24 mA output drive (VCC = 3.0 V)  
Latch-up performance exceeds 250 mA  
Direct interface with TTL levels  
Complies with JEDEC standard:  
JESD8-7 (1.65 V to 1.95 V)  
JESD8-5 (2.3 V to 2.7 V)  
JESD8C (2.7 V to 3.6 V)  
JESD36 (4.5 V to 5.5 V)  
ESD protection:  
HBM JESD22-A114F exceeds 2000 V  
MM JESD22-A115-A exceeds 200 V  
Multiple package options  
Specified from -40 °C to +85 °C and -40 °C to +125 °C  
 
 

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