Datasheet > 71T75602S150PFG8

71T75602S150PFG8

更新时间： 2024-12-02 00:22:27

品牌	Logo	应用领域
艾迪悌 - IDT		静态存储器
页数	文件大小	规格书
26页	260K
描述
2.5V Synchronous ZBT SRAMs I/O, Burst Counter Pipelined Outputs

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替代型号

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71T75602S150PFG8 数据手册

512K x 36, 1M x 18

IDT71T75602

IDT71T75802

2.5V Synchronous ZBT™ SRAMs

2.5V I/O, Burst Counter

Pipelined Outputs

Features

512K x 36, 1M x 18 memory configurations

◆

4-word burst capability (interleaved or linear)

◆

Supports high performance system speed - 200 MHz

(3.2 ns Clock-to-Data Access)

ZBT^TMFeature - No dead cycles between write and read

cycles

Internally synchronized output buffer enable eliminates the

need to control OE

Single R/W (READ/WRITE) control pin

Positive clock-edge triggered address, data, and control

signal registers for fully pipelinedapplications

Individual byte write (BW1 - BW4) control (May tie active)

Three chip enables for simple depth expansion

2.5V power supply ( 5%)

2.5V I/O Supply (VDDQ)

Power down controlled by ZZ input

Boundary Scan JTAG Interface (IEEE 1149.1 Compliant)

Packaged in a JEDEC standard 100-pin plastic thin quad

flatpack (TQFP), 119 ball grid array (BGA)

Green parts available, see Ordering Information

◆

Functional Block Diagram - 512K x 36

LBO

512Kx36 BIT

MEMORY ARRAY

Address A [0:18]

Address

CE1, CE2, CE2

R/W

CEN

Control

ADV/LD

BWx

DI DO

Control Logic

Clk

Mux

Sel

Clock

Output Register

Gate

TMS

TDI

TCK

Data I/O [0:31],

I/O P[1:4]

JTAG

TDO

TRST

5313 drw 01

(optional)

OCTOBER 2017

DSC-5313/11

12 3 4 5 6 7...26

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71T75602S150PFG8 替代型号

型号	品牌	替代类型	描述	数据表
IDT71T75602S150PF8	IDT	类似代替	ZBT SRAM, 512KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, MO-136DJ, TQ

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