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71108

更新时间： 2024-09-15 22:21:51

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威世 - VISHAY		/
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描述
N-Channel 30-V (D-S) MOSFET

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71108 数据手册

Si3454ADV

Vishay Siliconix

N-Channel 30-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

D TrenchFETr Power MOSFET

V_DS(V)

r_DS(on)(W)

I_D(A)

D 100% R_gTested

0.060 @ V = 10 V

4.5

3.8

0.085 @ V = 4.5 V

TSOP-6

Top View

(1, 2, 5, 6) D

3 mm

(3) G

2.85 mm

Ordering Information: Si3454ADV-T1

(4) S

Si3454ADV-T1—E3 (Lead Free)

Marking Code:

A4xxx

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

Gate-Source Voltage

"20

= 25_C

= 70_C

4.5

3.6

3.4

2.7

Continuous Drain Current (T = 150_C)

Pulsed Drain Current (10 ms Pulse Width)

Continuous Source Current (Diode Conduction)

1.7

2.0

1.3

1.0

= 25_C

= 70_C

1.14

0.73

Maximum Power Dissipation

Operating Junction and Storage Temperature Range

T , T

−55 to 150

stg

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t v 5 sec

Steady State

62.5

110

Maximum Junction-to-Ambient

thJA

thJF

_C/W

Maximum Junction-to-Foot (Drain)

Notes

a. Surface Mounted on 1” x 1” FR4 Board.

Document Number: 71108

S-40424—Rev. C, 15-Mar-04

www.vishay.com

12 3 4

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