Datasheet > 70V659S12DRGI8

70V659S12DRGI8

更新时间： 2024-11-08 02:35:07

品牌	Logo	应用领域
艾迪悌 - IDT		/
页数	文件大小	规格书
24页	234K
描述
HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

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中文翻译

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数据手册
替代型号

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70V659S12DRGI8 数据手册

IDT70V659/58/57S

HIGH-SPEED 3.3V

128/64/32K x 36

ASYNCHRONOUS DUAL-PORT

STATIC RAM

LEAD FINISH (SnPb) ARE IN EOL PROCESS - LAST TIME BUY EXPIRES JUNE 15, 2018

Features

◆

True Dual-Port memory cells which allow simultaneous

Full on-chip hardware support of semaphore signaling

between ports

Fully asynchronous operation from either port

Separate byte controls for multiplexed bus and bus

matching compatibility

Supports JTAG features compliant to IEEE 1149.1

LVTTL-compatible, single 3.3V (±150mV) power supply for

core

LVTTL-compatible, selectable 3.3V (±150mV)/2.5V (±100mV)

power supply for I/Os and control signals on each port

Available in a 208-pin Plastic Quad Flatpack, 208-ball fine

pitch Ball Grid Array, and 256-ball Ball Grid Array

Industrial temperature range (–40°C to +85°C) is available

for selected speeds

access of the same memory location

High-speed access

◆

– Commercial:10/12/15ns(max.)

– Industrial:12/15ns(max.)

Dual chip enables allow for depth expansion without

external logic

IDT70V659/58/57 easily expands data bus width to 72 bits

or more using the Master/Slave select when cascading

more than one device

M/S = VIH for BUSY output flag on Master,

M/S = VIL for BUSY input on Slave

Busy and Interrupt Flags

◆

On-chip port arbitration logic

Green parts available, see ordering information

Functional Block Diagram

BE3L

BE3R

BE2R

BE2L

BE1L

BE0L

BE1R

BE0R

R/WL

B B B B B B B B

E E E E E E E E

2 1

CE0L

CE1L

CE0R

CE1R

R R R R

OEL

OER

Dout0-8_L

Dout0-8_R

Dout9-17_L

Dout9-17_R

Dout18-26_R

Dout27-35_R

Dout18-26_L

Dout27-35_L

128/64/32K x 36

MEMORY

ARRAY

I/O0L- I/O35L

Di n_L

Di n_R

I/O0R -I/O35R

(1)

16 L

16R

Address

Decoder

Address

Decoder

ADDR_L

ADDR_R

A0R

A0L

CE0L

CE1L

ARBITRATION

CE0R

CE1R

INTERRUPT

SEMAPHORE

LOGIC

R/W

(2,3)

BUSY

SEM

INT

BUSY

SEM

M/S

(3)

INT

TMS

TCK

TDI

JTAG

TDO

TRST

NOTES:

4869 drw 01

1. A16 is a NC for IDT70V658. Also, Addresses A16 and A15 are NC's for IDT70V657.

2. BUSY is an input as a Slave (M/S=VIL) and an output when it is a Master (M/S=VIH).

3. BUSY and INT are non-tri-state totem-pole outputs (push-pull).

JUNE 2018

DSC-4869/8

12 3 4 5 6 7...24

中文翻译

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70V659S12DRGI8 替代型号

型号	品牌	替代类型	描述	数据表
70V659S12BFGI	IDT	完全替代	HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
70V659S12DRGI	IDT	类似代替	HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

与70V659S12DRGI8相关器件

型号	品牌	获取价格	描述	数据表
70V659S12DRI	IDT	获取价格	PQFP-208, Tray
70V659S12DRI8	IDT	获取价格	Dual-Port SRAM, 128KX36, 12ns, CMOS, PQFP208, 28 X 28 MM, 3.50 MM HEIGHT, PLASTIC, QFP-208
70V659S15BC8	IDT	获取价格	CABGA-256, Reel
70V659S15BCG	IDT	获取价格	HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
70V659S15BCG8	IDT	获取价格	HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
70V659S15BCGI	IDT	获取价格	HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
70V659S15BCGI8	IDT	获取价格	HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM
70V659S15BCI8	IDT	获取价格	Application Specific SRAM, 128KX36, 15ns, CMOS, PBGA256, 17 X 17 MM, 1.40 MM HEIGHT, 1 MM
70V659S15BF8	IDT	获取价格	CABGA-208, Reel
70V659S15BFG	IDT	获取价格	HIGH-SPEED 3.3V 128/64/32K x 36 ASYNCHRONOUS DUAL-PORT STATIC RAM

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