5秒后页面跳转
70P259L90BYI8 PDF预览

70P259L90BYI8

更新时间: 2024-01-13 19:33:25
品牌 Logo 应用领域
艾迪悌 - IDT 静态存储器内存集成电路
页数 文件大小 规格书
22页 146K
描述
Application Specific SRAM, 8KX16, 90ns, CMOS, PBGA100, 0.50 MM, BGA-100

70P259L90BYI8 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active包装说明:BGA, BGA100,10X10,20
Reach Compliance Code:not_compliant风险等级:5.56
最长访问时间:90 ns其他特性:IT ALSO OPERATES AT SUPPLY VOLTAGE 2.5 V AND 3 V NOMINAL
I/O 类型:COMMONJESD-30 代码:S-PBGA-B100
JESD-609代码:e0内存密度:131072 bit
内存集成电路类型:APPLICATION SPECIFIC SRAM内存宽度:16
功能数量:1端口数量:2
端子数量:100字数:8192 words
字数代码:8000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:8KX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:BGA
封装等效代码:BGA100,10X10,20封装形状:SQUARE
封装形式:GRID ARRAY并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:1.8/3 V
认证状态:Not Qualified最大待机电流:0.006 A
子类别:SRAMs最大压摆率:0.06 mA
最大供电电压 (Vsup):1.9 V最小供电电压 (Vsup):1.7 V
标称供电电压 (Vsup):1.8 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:BALL
端子节距:0.5 mm端子位置:BOTTOM
处于峰值回流温度下的最长时间:30Base Number Matches:1

70P259L90BYI8 数据手册

 浏览型号70P259L90BYI8的Datasheet PDF文件第1页浏览型号70P259L90BYI8的Datasheet PDF文件第2页浏览型号70P259L90BYI8的Datasheet PDF文件第4页浏览型号70P259L90BYI8的Datasheet PDF文件第5页浏览型号70P259L90BYI8的Datasheet PDF文件第6页浏览型号70P259L90BYI8的Datasheet PDF文件第7页 
IDT70P269/259/249L  
Low Power 16K/8K/4K x 16 Dual-Port Static RAM  
Industrial Temperature Range  
PinNames  
Left Port  
Right Port  
Description  
Chip Select (Input)  
CS  
WE  
OE  
L
CS  
WE  
OE  
R
Read/Write Enable (Input)  
Output Enable (Input)  
L
R
L
R
(1)  
(1)  
A0L - A13L  
A0R - A13R  
Address (Input)  
MSEL (2)  
L
MSEL (2)  
R
Mode Select (Input)  
Address/Data (Input/Output)  
Address Latch Enable (Input)  
Upper Byte Enable (Input)  
Lower Byte Enable (Input)  
Interrupt Flag (Output)  
I/O0L - I/O15L  
I/O0R - I/O15R  
(3)  
(3)  
ADV  
UB  
LB  
INT  
BUSY  
L
ADV  
UB  
LB  
INT  
BUSY  
SFEN  
IRR  
- IRR (4)  
ODR - ODR  
R
L
R
NOTES:  
1. A13 - A0 for IDT70P269; A12 - A0 for IDT70P259; A11 - A0 for IDT70P249.  
2. MSEL = 0 for Standard SRAM operation, MSEL = 1 for Address/Data Mux  
(ADM) operation.  
L
R
L
R
3. ADV is only used when the port is in ADM mode.  
Busy Flag (Output)  
L
R
4. IRR0 is A13L and IRR1 is A13R for 70P269.  
Special Function Enable (Input)  
Input Read Register (Inputs)  
Output Drive Register (Outputs)  
Core Power Supply (Input)  
Ground (Input)  
0
1
0
4
VDD  
VSS  
VDDIO  
L
Left Port Power Supply (Input)  
Right Port Power Supply (Input)  
VDDIO  
R
7146 tbl 01  
Truth Table I: ADM Interface Read/Write Control  
Inputs  
Outputs  
I/O0 - I/O15  
High-Z  
Mode  
Deselected/Power Down  
ADV  
X
CS  
H
X
X
L
WE  
X
OE  
X
H
X
L
UB  
X
X
H
L
LB  
X
X
H
L
X
X
High-Z  
Output Disable  
X
X
High-Z  
Upper and Lower Bytes Deselected  
Pulse  
H
DATAOUT (I/O  
0
- I/O15) Read Upper and Lower Bytes  
- I/O  
DATAOUT (I/O0  
High-Z (I/O - I/O15  
7)  
Pulse  
L
H
L
H
L
8
)
Read Lower Byte Only  
High-Z (I/O0 - I/O7)  
DATAOUT (I/O8 - I/O15) Read Upper Byte Only  
Pulse  
Pulse  
Pulse  
L
L
L
H
L
L
L
X
X
L
L
H
H
L
L
DATAIN (I/O  
0
- I/O15  
)
Write Upper and Lower Bytes  
DATAIN (I/O  
0
8
- I/O  
7
)
High-Z (I/O  
- I/O15  
)
Write Lower Byte Only  
High-Z (I/O  
0
8
- I/O  
7
)
Pulse  
L
L
X
L
H
DATAIN (I/O  
- I/O15  
)
Write Upper Byte Only  
7146 tbl 02a  
OCTOBER 16, 2008  
6.42  
3

与70P259L90BYI8相关器件

型号 品牌 描述 获取价格 数据表
70P264L40BYI IDT Application Specific SRAM, 16KX16, 40ns, CMOS, PBGA81, 0.50 MM PITCH, BGA-81

获取价格

70P264L55BYGI8 IDT Dual-Port SRAM, 16KX16, 55ns, CMOS, PBGA81, 0.50 MM PITCH, GREEN, BGA-81

获取价格

70P264L55BYI IDT Application Specific SRAM, 16KX16, 55ns, CMOS, PBGA81, 0.50 MM PITCH, BGA-81

获取价格

70P265L65BYGI8 IDT Dual-Port SRAM, 16KX16, 65ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100

获取价格

70P265L65BYI IDT Application Specific SRAM, 16KX16, 65ns, CMOS, PBGA100, 0.50 MM PITCH, BGA-100

获取价格

70P265L90BYGI IDT Dual-Port SRAM, 16KX16, 90ns, CMOS, PBGA100, 0.5 MM PITCH, GREEN, BGA-100

获取价格