是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | BGA | 包装说明: | 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, BGA-100 |
针数: | 100 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.41 |
风险等级: | 5.49 | 最长访问时间: | 55 ns |
I/O 类型: | COMMON | JESD-30 代码: | S-PBGA-B100 |
JESD-609代码: | e1 | 长度: | 6 mm |
内存密度: | 65536 bit | 内存集成电路类型: | DUAL-PORT SRAM |
内存宽度: | 16 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端口数量: | 2 |
端子数量: | 100 | 字数: | 4096 words |
字数代码: | 4000 | 工作模式: | ASYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 4KX16 | 输出特性: | 3-STATE |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VFBGA |
封装等效代码: | BGA100,10X10,20 | 封装形状: | SQUARE |
封装形式: | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | 260 | 电源: | 1.8 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
最大待机电流: | 0.000008 A | 最小待机电流: | 1.7 V |
子类别: | SRAMs | 最大压摆率: | 0.025 mA |
最大供电电压 (Vsup): | 1.9 V | 最小供电电压 (Vsup): | 1.7 V |
标称供电电压 (Vsup): | 1.8 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Tin/Silver/Copper (Sn/Ag/Cu) | 端子形式: | BALL |
端子节距: | 0.5 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | 30 | 宽度: | 6 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
70P247L55BYGI8 | IDT | Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, GREEN, B |
获取价格 |
|
70P247L55BYI | IDT | Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100 |
获取价格 |
|
70P247L55BYI8 | IDT | Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 0.5 MM PITCH, BGA-100 |
获取价格 |
|
70P248L55BYI | IDT | Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, BGA-100 |
获取价格 |
|
70P248L55BYI8 | IDT | Dual-Port SRAM, 4KX16, 55ns, CMOS, PBGA100, 6 X 6 MM, 1 MM HEIGHT, 0.50 MM PITCH, BGA-100 |
获取价格 |
|
70P249L65BYGI8 | IDT | Dual-Port SRAM, 4KX16, 40ns, CMOS, PBGA100, 0.50 MM PITCH, GREEN, BGA-100 |
获取价格 |