Datasheet > 6MBP200RA-060

6MBP200RA-060

更新时间： 2022-01-19 03:47:00

品牌	Logo	应用领域
其他 - ETC		双极性晶体管
页数	文件大小	规格书
6页	390K
描述
IGBTs

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6MBP200RA-060 数据手册

IGBT IPM

600V

6×200A

6MBP 200RA-060

Intelligent Power Module ( R-Series )

n Maximum Ratings and Characteristics

n Outline Drawing

• Absolute Maximum Ratings ( T_c=25°C)

Items

Symbols

Ratings

Units

Min.

200

Max.

450

500

400

600

200

400

200

735

DC Bus Voltage

DC Bus Voltage (surge)

V_DC

V_DC(Surge)

V_SC

V_CES

I_C

I_CP

-I_C

P_C

DC Bus Voltage (short operating)

Collector-Emitter Voltage

Inverter

Collector

Current

Collector Power Dissipation

Voltage of Power Supply for Driver

Input Signal Voltage

Continuous

1ms

Duty=58.8%

One Transistor

V_CC

V_IN

V_Z

Input Signal Current

Alarm Signal Voltage

Alarm Signal Current

I_IN

V_ALM

I_ALM

V_CC

Junction Temperature

Operating Temperature

Storage Temperature

T_j

T_OP

T_stg

150

100

125

-20

-40

°C

Isolation Voltage

A.C. 1min.

V_iso

Mounting *1

Terminals *1

2500

3.5

Screw Torque

Note: *1: Recommendable Value; 2.5 ~ 3.0 Nm (M5)

• Electrical Characteristics of Power Circuit ( at T_j=25°C, V_CC=15V )

Items

Symbols

I_CES

Conditions

V_CE=600V, Input Terminal Open

I_C=200A

Min.

Typ.

Max.

1.0

2.8

Units

Collector Current At Off Signal Input

INV Collector-Emitter Saturation Voltage

Forward Voltage of FWD

V_CE(Sat)

V_F

-I_C=200A

3.0

• Electrical Characteristics of Control Circuit ( at T_j=25°C, V_CC=15V )

Items

Symbols

Conditions

f_SW=0~15kHz, T_C=-20~100°C

Off

R_IN=20kW

Min.

1.00

1.70

Max.

114

1.70

2.40

Units

Current of P-Line Side Driver (One Unit)

Current of N-Line Side Driver (Three Units)

I_CCP

I_CCN

1.35

2.05

8.0

V_IN(th)

Input Signal Threshold Voltage

Input Zener Voltage

V_Z

Over Heating Protection Temperature Level

Hysteresis

IGBT Chips Over Heating Protec. Temp. Level

Hysteresis

Inverter Collector Current Protection Level

Over Current Detecting Time

Alarm Signal Hold Time

Limiting Resistor for Alarm

Under Voltage Protection Level

Hysteresis

T_COH

T_CH

T_jOH

T_jH

V_DC=0V, I_C=0A, Case Temp.

110

150

300

125

°C

Surface of IGBT Chip

I_OC

T_j=125°C

T_j=25°C

µs

t_DOC

t_ALM

R_ALM

V_UV

V_H

1500

1.5

1425

11.0

0.2

1575

12.5

• Dynamic Characteristics ( at T_C=T_j=125°C, V_CC=15V )

Items

Symbols

Conditions

Min.

Typ.

Max.

Units

t_ON

I_C=200A, V_DC=300V

0.3

Switching Time

t_OFF

t_RR

3.6

0.4

µs

I_F=200A, V_DC=300V

• Thermal Characteristics

Items

Symbols

R_th(j-c)

Conditions

Inverter IGBT

Diode

Min.

Typ.

Max.

0.17

0.36

Units

Thermal Resistance

R_th(j-c)

°C/W

R_th(c-f)

With Thermal Compound

0.05

12 3 4 5 6

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