IGBT IPM
600V
6MBP 20RH-060
6×20A
Intelligent Power Module ( RH-Series )
n Outline Drawing
n Maximum Ratings and Characteristics
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min.
0
Max.
450
500
400
600
20
40
20
63
20
DC Bus Voltage
DC Bus Voltage (surge)
VDC
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
0
V
A
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Voltage of Power Supply for Driver
Input Signal Voltage
0
Continuous
1ms
Duty=49.6%
One Transistor
W
V
VCC
VIN
-0.3
0
VZ
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
IIN
VALM
IALM
1
VCC
15
mA
V
mA
0
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOP
Tstg
150
100
125
-20
-40
°C
Isolation Voltage
Screw Torque
A.C. 1min.
Viso
Mounting (M4)
2500
2.0
V
Nm
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
VCE=600V, Input Terminal Open
IC=20A
Min.
Min.
Typ.
Max.
1.0
2.7
Units
mA
V
Collector Current At Off Signal Input
Collector-Emitter Saturation Voltage
Forward Voltage of FWD
ICES
VCE(Sat)
VF
-IC=20A
3.5
V
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Typ.
2.0
4.0
1.35
1.60
8.0
Max.
5.0
10.0
1.70
1.95
Units
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
ICCP
ICCN
mA
1.00
1.25
VIN(th)
Input Signal Threshold Voltage
Off
V
Input Zener Voltage
VZ
RIN=20kW
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Over Current Detecting Resistance Value
Under Voltage Protection Level
Hysteresis
TjOH
TjH
IOC
tDOC
tALM
ROC
VUV
VH
Surface Of IGBT Chip
150
30
°C
20
37
5.0
2.0
5.4
N-Side, (N1-N2 open)
Tj=25°C
44
7.0
A
µs
ms
mW
1.0
11.0
0.2
12.5
0.8
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
tON
IC=20A, VDC=300V
0.5
Switching Time
tOFF
tRR
3.5
0.5
µs
IF=20A, VDC=300V
• Thermal Characteristics
Items
Symbols
Rth(j-c)
Conditions
Inverter IGBT
Diode
Min.
Typ.
Max.
2.00
3.60
Units
Thermal Resistance
Rth(j-c)
°C/W
Rth(c-f)
With Thermal Compound
0.05