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6MBP20RH-060 PDF预览

6MBP20RH-060

更新时间: 2024-11-17 23:23:47
品牌 Logo 应用领域
其他 - ETC 双极性晶体管
页数 文件大小 规格书
4页 167K
描述
IGBTs

6MBP20RH-060 数据手册

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IGBT IPM  
600V  
6MBP 20RH-060  
6×20A  
Intelligent Power Module ( RH-Series )  
n Outline Drawing  
n Maximum Ratings and Characteristics  
Absolute Maximum Ratings ( Tc=25°C)  
Items  
Symbols  
Ratings  
Units  
Min.  
0
Max.  
450  
500  
400  
600  
20  
40  
20  
63  
20  
DC Bus Voltage  
DC Bus Voltage (surge)  
VDC  
VDC(Surge)  
VSC  
VCES  
IC  
ICP  
-IC  
PC  
0
V
A
DC Bus Voltage (short operating)  
Collector-Emitter Voltage  
Inverter  
Collector  
Current  
Collector Power Dissipation  
Voltage of Power Supply for Driver  
Input Signal Voltage  
0
Continuous  
1ms  
Duty=49.6%  
One Transistor  
W
V
VCC  
VIN  
-0.3  
0
VZ  
Input Signal Current  
Alarm Signal Voltage  
Alarm Signal Current  
IIN  
VALM  
IALM  
1
VCC  
15  
mA  
V
mA  
0
Junction Temperature  
Operating Temperature  
Storage Temperature  
TJ  
TOP  
Tstg  
150  
100  
125  
-20  
-40  
°C  
Isolation Voltage  
Screw Torque  
A.C. 1min.  
Viso  
Mounting (M4)  
2500  
2.0  
V
Nm  
Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )  
Items  
Symbols  
Conditions  
VCE=600V, Input Terminal Open  
IC=20A  
Min.  
Min.  
Typ.  
Max.  
1.0  
2.7  
Units  
mA  
V
Collector Current At Off Signal Input  
Collector-Emitter Saturation Voltage  
Forward Voltage of FWD  
ICES  
VCE(Sat)  
VF  
-IC=20A  
3.5  
V
Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )  
Items  
Symbols  
Conditions  
fSW=0~15kHz, TC=-20~100°C  
fSW=0~15kHz, TC=-20~100°C  
On  
Typ.  
2.0  
4.0  
1.35  
1.60  
8.0  
Max.  
5.0  
10.0  
1.70  
1.95  
Units  
Current of P-Line Side Driver (One Unit)  
Current of N-Line Side Driver (Three Units)  
ICCP  
ICCN  
mA  
1.00  
1.25  
VIN(th)  
Input Signal Threshold Voltage  
Off  
V
Input Zener Voltage  
VZ  
RIN=20kW  
IGBT Chips Over Heating Protec. Temp. Level  
Hysteresis  
Inverter Collector Current Protection Level  
Over Current Detecting Time  
Alarm Signal Hold Time  
Over Current Detecting Resistance Value  
Under Voltage Protection Level  
Hysteresis  
TjOH  
TjH  
IOC  
tDOC  
tALM  
ROC  
VUV  
VH  
Surface Of IGBT Chip  
150  
30  
°C  
20  
37  
5.0  
2.0  
5.4  
N-Side, (N1-N2 open)  
Tj=25°C  
44  
7.0  
A
µs  
ms  
mW  
1.0  
11.0  
0.2  
12.5  
0.8  
V
Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )  
Items  
Symbols  
Conditions  
Min.  
Typ.  
Max.  
Units  
tON  
IC=20A, VDC=300V  
0.5  
Switching Time  
tOFF  
tRR  
3.5  
0.5  
µs  
IF=20A, VDC=300V  
Thermal Characteristics  
Items  
Symbols  
Rth(j-c)  
Conditions  
Inverter IGBT  
Diode  
Min.  
Typ.  
Max.  
2.00  
3.60  
Units  
Thermal Resistance  
Rth(j-c)  
°C/W  
Rth(c-f)  
With Thermal Compound  
0.05  
 

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