IGBT IPM
1200V
6MBP 25RA-120
6x25A
Intelligent Power Module ( R-Series )
n Maximum Ratings and Characteristics
n Outline Drawing
• Absolute Maximum Ratings ( Tc=25°C)
Items
Symbols
Ratings
Units
Min.
0
Max.
900
DC Bus Voltage
VDC
DC Bus Voltage (surge)
DC Bus Voltage (short operating)
Collector-Emitter Voltage
Inverter
Collector
Current
Collector Power Dissipation
Voltage of Power Supply for Driver
Input Signal Voltage
VDC(Surge)
VSC
VCES
IC
ICP
-IC
PC
VCC
0
200
0
1000
800
1200
25
50
25
198
20
VZ
V
A
Continuous
1ms
Duty=62.6%
One Transistor
W
V
0
0
VIN
Input Signal Current
Alarm Signal Voltage
Alarm Signal Current
IIN
VALM
IALM
1
VCC
15
mA
V
mA
0
Junction Temperature
Operating Temperature
Storage Temperature
Tj
TOP
Tstg
Viso
150
100
125
2500
3.5
3.5
-20
-40
°C
Isolation Voltage
A.C. 1min.
V
Mounting *1
Terminals *1
Nm
Screw Torque
Note: *1: Recommendable Value; 2.5 ~ 3.0 Nm (M5)
• Electrical Characteristics of Power Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
ICES
Conditions
VCE=1200V, Input Terminal Open
IC=25A
Min.
Typ.
Typ.
Max.
1.0
2.6
Units
mA
V
Collector Current At Off Signal Input
INV Collector-Emitter Saturation Voltage
Forward Voltage of FWD
VCE(Sat)
VF
-IC=25A
3.0
V
• Electrical Characteristics of Control Circuit ( at Tj=25°C, VCC=15V )
Items
Symbols
Conditions
fSW=0~15kHz, TC=-20~100°C
fSW=0~15kHz, TC=-20~100°C
On
Off
RIN=20kW
Min.
3
10
1.00
1.25
Max.
18
65
1.70
1.95
Units
Current of P-Line Side Driver (One Unit)
Current of N-Line Side Driver (Three Units)
ICCP
ICCN
mA
1.35
1.60
8.0
VIN(th)
Input Signal Threshold Voltage
V
Input Zener Voltage
VZ
Over Heating Protection Temperature Level
Hysteresis
IGBT Chips Over Heating Protec. Temp. Level
Hysteresis
Inverter Collector Current Protection Level
Over Current Detecting Time
Alarm Signal Hold Time
Limiting Resistor for Alarm
Under Voltage Protection Level
Hysteresis
TCOH
TCH
TjOH
TjH
VDC=0V, IC=0A, Case Temp.
110
150
38
125
20
20
°C
Surface Of IGBT Chip
IOC
Tj=125°C
Tj=25°C
A
µs
ms
W
tDOC
tALM
RALM
VUV
VH
10
2
1500
1.5
1425
11.0
0.2
1575
12.5
V
• Dynamic Characteristics ( at TC=Tj=125°C, VCC=15V )
Items
Symbols
Conditions
Min.
Typ.
Max.
Units
tON
IC=25A, VDC=600V
0.3
Switching Time
tOFF
tRR
3.6
0.4
µs
IF=25A, VDC=600V
• Thermal Characteristics
Items
Symbols
Rth(j-c)
Conditions
Inverter IGBT
Diode
Min.
Typ.
Max.
0.63
1.33
Units
Thermal Resistance
Rth(j-c)
°C/W
Rth(c-f)
With Thermal Compound
0.05