Datasheet > 65C256

65C256

更新时间： 2024-09-17 22:19:43

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
11页	75K
描述
32K x 8 LOW POWER CMOS STATIC RAM

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65C256 数据手册

IS65C256

ISSI

MARCH 2004

32K x 8 LOW POWER CMOS

STATIC RAM

FEATURES

DESCRIPTION

The ISSI IS65C256 is a low power, 32,768 word by 8-bit

CMOS static RAM. It is fabricated using ISSI's high-

performance, low power CMOS technology.

• High-speed access time: 20 ns

• Low active power: 200 mW (typical)

• Low standby power:

When CS is HIGH (deselected), the device assumes a

standby mode at which the power dissipation can be

reduced down to 250 µW (typical) at CMOS input levels.

250 µW (typical) CMOS standby

• Fully static operation: no clock or refresh

required

Easy memory expansion is provided by using an active

LOW Chip Select (CS) input and an active LOW Output

Enable (OE) input. The active LOW Write Enable (WE)

controls both writing and reading of the memory.

• TTL compatible inputs and outputs

• Single 5V power supply

• Temperature Offerings:

Option A1: –40^oC to +85^oC

Option A2: –40^oC to +105^oC

Option A3: –40^oC to +125^oC

TheIS65C256isPackagedintheJEDECStandard28-Pin

SOP and 28-Pin TSOP (Type I).

FUNCTIONAL BLOCK DIAGRAM

32K X 8

MEMORY ARRAY

A0-A14

DECODER

VDD

GND

I/O

DATA

COLUMN I/O

I/O0-I/O7

CIRCUIT

CONTROL

CIRCUIT

Copyright © 2004 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability

arisingoutoftheapplicationoruseofanyinformation, productsorservicesdescribedherein. Customersareadvisedtoobtainthelatestversionofthisdevicespecificationbeforerelyingonany

publishedinformationandbeforeplacingordersforproducts.

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

Rev. A

03/24/04

12 3 4 5 6 7...11

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