Datasheet > 60N60B2

60N60B2

更新时间： 2024-09-10 12:35:31

品牌	Logo	应用领域
IXYS		双极性晶体管
页数	文件大小	规格书
6页	514K
描述
B2-Class High Speed IGBTs (Electrically Isolated Back Surface)

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中文翻译

获取价格

数据手册

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60N60B2 数据手册

Advance Technical Data

HiPerFAST^TMIGBT

ISOPLUS247^TM

IXGR 60N60B2

IXGR 60N60B2D1

V_CES

I_C25

V_CE(sat)

t_fi(typ)

= 600 V

= 75 A

= 2.0 V

= 100 ns

B2-Class High Speed IGBTs

(Electrically Isolated Back Surface)

Symbol

TestConditions

Maximum Ratings

PLUS247(IXGR)

E153432

V_CES

V_CGR

T_J= 25°C to 150°C

600

T_J= 25°C to 150°C; R_GE= 1 MΩ

V_GES

V_GEM

Continuous

Transient

(ISOLATED TAB)

I_C25

I_C110

I_CM

T_C= 25°C (limited by leads)

T_C= 110°C

G = Gate

E = Emitter

C = Collector

T_C= 25°C, 1 ms

300

SSOA

V_GE= 15 V, T_VJ= 125°C, R_G= 10 Ω

I_CM= 150

Features

(RBSOA)

Clamped inductive load @ V_CE≤ 600 V

DCB Isolated mounting tab

Meets TO-247AD package Outline

High current handling capability

Latest generation HDMOS^TMprocess

MOS Gate turn-on

P_C

T_C= 25°C

250

T_J

-55 ... +150

150

°C

T_JM

T_stg

-55 ... +150

- drive simplicity

V_ISOL

50/60 Hz, RMS, t = 1m

2500

Applications

Weight

Maximum lead temperature for soldering

1.6 mm (0.062 in.) from case for 10 s

300

°C

Uninterruptible power supplies (UPS)

Switched-mode and resonant-mode

power supplies

AC motor speed control

DC servo and robot drives

DC choppers

Symbol

TestConditions

Characteristic Values

(T_J= 25°C, unless otherwise specified)

Advantages

Min. Typ. Max.

Easy assembly

High power density

Very fast switching speeds for high

V_GE(th)

I_CES

I_C= 250 µA, V_CE= V_GE

3.0

5.0

V_CE= V_CES

V_GE= 0 V

300

µA

frequency applications

T_J= 125°C

I_GES

V_CE= 0 V, V_GE= 20 V

100

2.0

V_CE(sat)

I_C= 50 A, V_GE= 15 V

Note 1

DS99161(04/04)

12 3 4 5 6

中文翻译

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