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5SDD71B0200 PDF预览

5SDD71B0200

更新时间: 2024-11-06 03:04:31
品牌 Logo 应用领域
ABB 二极管
页数 文件大小 规格书
4页 87K
描述
Rectifier Diode

5SDD71B0200 技术参数

生命周期:Active包装说明:B, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.58Is Samacsys:N
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:O-CEDB-N2最大非重复峰值正向电流:60000 A
元件数量:1相数:1
端子数量:2最高工作温度:170 °C
最低工作温度:-40 °C最大输出电流:7110 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大重复峰值反向电压:200 V子类别:Rectifier Diodes
表面贴装:YES端子形式:NO LEAD
端子位置:ENDBase Number Matches:1

5SDD71B0200 数据手册

 浏览型号5SDD71B0200的Datasheet PDF文件第2页浏览型号5SDD71B0200的Datasheet PDF文件第3页浏览型号5SDD71B0200的Datasheet PDF文件第4页 
VRRM  
IFAVM  
=
=
200 V  
Rectifier Diode  
7110 A  
IFRMS = 11200 A  
5SDD 71B0200  
IFSM  
VF0  
rF  
= 55000 A  
=
=
0.74 V  
0.026  
mW  
Doc. No. 5SYA1132-02 July 06  
· Optimized for high current rectifiers  
· Very low on-state voltage  
· Very low thermal resistance  
Blocking  
VRRM  
VRSM  
IRRM  
Repetitive peak reverse voltage  
Maximum peak reverse voltage  
Repetitive peak reverse current  
200 V  
300 V  
Half sine wave, tP = 10 ms, f = 50 Hz  
Half sine wave, tP = 10 ms  
VR = VRRM  
mA Tj = 170 °C  
£ 50  
Mechanical  
FM  
Mounting force  
min.  
20 kN  
24 kN  
max.  
a
Acceleration:  
50 m/s2  
200 m/s2  
0.14 kg  
Device unclamped  
Device clamped  
m
Weight  
DS  
Da  
Surface creepage distance  
Air strike distance  
4 mm  
4 mm  
Fig. 1  
Outline drawing.  
All dimensions are in millimeters and represent  
nominal values unless stated otherwise.  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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