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5SDF07F4501 PDF预览

5SDF07F4501

更新时间: 2024-11-09 03:04:31
品牌 Logo 应用领域
ABB 二极管快恢复二极管快速恢复二极管
页数 文件大小 规格书
6页 351K
描述
Fast Recovery Diode

5SDF07F4501 技术参数

生命周期:Active包装说明:F, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76其他特性:FREEWHEELING DIODE
应用:FAST RECOVERY配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.1 VJESD-30 代码:O-CEDB-N2
最大非重复峰值正向电流:44000 A元件数量:1
相数:1端子数量:2
最高工作温度:125 °C最低工作温度:-40 °C
最大输出电流:650 A封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大重复峰值反向电压:4500 V
最大反向恢复时间:8 µs子类别:Rectifier Diodes
表面贴装:YES端子形式:NO LEAD
端子位置:ENDBase Number Matches:1

5SDF07F4501 数据手册

 浏览型号5SDF07F4501的Datasheet PDF文件第2页浏览型号5SDF07F4501的Datasheet PDF文件第3页浏览型号5SDF07F4501的Datasheet PDF文件第4页浏览型号5SDF07F4501的Datasheet PDF文件第5页浏览型号5SDF07F4501的Datasheet PDF文件第6页 
VRRM  
IFAVM  
IFSM  
VF0  
=
=
=
=
=
=
4500 V  
650 A  
16 kA  
1.4 V  
m  
2800 V  
Fast Recovery Diode  
5SDF 07F4501  
rF  
1
VDClink  
Doc. No. 5SYA1107-03 Sep. 01  
Patented free-floating silicon technology  
Low on-state and switching losses  
Optimized for use as freewheeling diode in GTO converters with high DC link  
voltages  
Standard press-pack housing, hermetically cold-welded  
Cosmic radiation withstand rating  
Blocking  
VRRM  
Repetitive peak reverse voltage  
Repetitive peak reverse current  
4500 V  
50 mA  
Half sine wave, tP = 10 ms, f = 50 Hz  
VR = VRRM, Tj = 125°C  
IRRM  
VDClink  
Permanent DC voltage for 100 FIT  
failure rate  
2800  
V
V
100% Duty  
Ambient cosmic radiation at  
sea level in open air.  
5% Duty  
VDClink  
Permanent DC voltage for 100 FIT  
failure rate  
Mechanical data (see Fig. 12)  
min.  
20 kN  
Fm  
a
Mounting force  
max.  
24 kN  
Acceleration:  
50 m/s2  
Device unclamped  
Device clamped  
200 m/s2  
m
Weight  
0.46 kg  
33 mm  
20 mm  
DS  
Da  
Surface creepage distance  
Air strike distance  
ABB Semiconductors AG reserves the right to change specifications without notice.  

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