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5SDF10H4503 PDF预览

5SDF10H4503

更新时间: 2024-11-09 03:04:31
品牌 Logo 应用领域
ABB 二极管快恢复二极管
页数 文件大小 规格书
7页 369K
描述
Fast Recovery Diode

5SDF10H4503 技术参数

生命周期:Active包装说明:H, 2 PIN
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.76应用:FAST RECOVERY
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):3.36 V
JESD-30 代码:O-CEDB-N2最大非重复峰值正向电流:20000 A
元件数量:1相数:1
端子数量:2最高工作温度:125 °C
最低工作温度:最大输出电流:1100 A
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装形状:ROUND
封装形式:DISK BUTTON认证状态:Not Qualified
最大重复峰值反向电压:4500 V子类别:Rectifier Diodes
表面贴装:YES端子形式:NO LEAD
端子位置:ENDBase Number Matches:1

5SDF10H4503 数据手册

 浏览型号5SDF10H4503的Datasheet PDF文件第2页浏览型号5SDF10H4503的Datasheet PDF文件第3页浏览型号5SDF10H4503的Datasheet PDF文件第4页浏览型号5SDF10H4503的Datasheet PDF文件第5页浏览型号5SDF10H4503的Datasheet PDF文件第6页浏览型号5SDF10H4503的Datasheet PDF文件第7页 
VRRM  
IF(AV)M  
IFSM  
=
=
=
=
=
=
4500 V  
1100 A  
Fast Recovery Diode  
20×103 A  
5SDF 10H4503  
V(T0)  
rT  
1.75 V  
0.88  
mW  
VDClink  
2800 V  
Doc. No. 5SYA1163-01 Oct. 06  
· Patented free-floating technology  
· Industry standard housing  
· Cosmic radiation withstand rating  
· Low on-state and switching losses  
· Optimized for snubberless operation  
Blocking  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
Value  
Unit  
V
Repetitive peak reverse voltage  
VRRM  
f = 50 Hz, tp = 10ms, Tvj = 125°C  
4500  
2800  
Permanent DC voltage for 100 FIT  
failure rate  
VDC-link  
Ambient cosmic radiation at sea level in open  
air. (100% Duty)  
V
Permanent DC voltage for 100 FIT  
failure rate  
VDC-link  
Ambient cosmic radiation at sea level in open  
air. (5% Duty)  
3200  
V
Characteristic values  
Parameter  
Symbol Conditions  
min  
typ  
max  
Unit  
mA  
Repetitive peak reverse current  
IRRM  
VR = VRRM, Tvj = 125°C  
50  
Mechanical data  
Maximum rated values 1)  
Parameter  
Symbol Conditions  
min  
typ  
max  
46  
Unit  
Mounting force  
Acceleration  
Fm  
36  
40  
kN  
a
a
Device unclamped  
Device clamped  
50  
m/s2  
m/s2  
Acceleration  
200  
Characteristic values  
Parameter  
Symbol Conditions  
min  
26.0  
typ  
max  
Unit  
Weight  
m
0.83  
26.4  
kg  
Housing thickness  
Surface creepage distance  
Air strike distance  
H
mm  
mm  
mm  
DS  
Da  
33  
20  
Note 1 Maximum rated values indicate limits beyond which damage to the device may occur  
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.  

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