5秒后页面跳转
5962-9679502MXX PDF预览

5962-9679502MXX

更新时间: 2024-01-04 14:59:15
品牌 Logo 应用领域
WEDC 静态存储器内存集成电路
页数 文件大小 规格书
24页 209K
描述
Standard SRAM, 256KX16, 25ns, CMOS, FP-44

5962-9679502MXX 技术参数

生命周期:Obsolete包装说明:FP-44
Reach Compliance Code:unknown风险等级:5.84
最长访问时间:25 nsJESD-30 代码:R-XDFP-F44
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:16功能数量:1
端子数量:44字数:262144 words
字数代码:256000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:256KX16封装主体材料:UNSPECIFIED
封装代码:DFP封装形状:RECTANGULAR
封装形式:FLATPACK并行/串行:PARALLEL
认证状态:Not Qualified座面最大高度:2.92 mm
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子形式:FLAT端子节距:1.27 mm
端子位置:DUAL宽度:12.955 mm
Base Number Matches:1

5962-9679502MXX 数据手册

 浏览型号5962-9679502MXX的Datasheet PDF文件第1页浏览型号5962-9679502MXX的Datasheet PDF文件第2页浏览型号5962-9679502MXX的Datasheet PDF文件第4页浏览型号5962-9679502MXX的Datasheet PDF文件第5页浏览型号5962-9679502MXX的Datasheet PDF文件第6页浏览型号5962-9679502MXX的Datasheet PDF文件第7页 
1.3 Absolute maximum ratings. 2/  
Voltage on any input relative to VSS - - - - - - - -  
Storage temperature range - - - - - - - - - - - - - - -  
Maximum power dissipation (PD) - - - - - - - - - - -  
Lead temperature (soldering, 10 seconds)- - - - -  
Thermal resistance, junction-to-case (ΘJC):  
Case X - - - - - - - - - - - - - - - - - - - - - - - - - - - -  
Case Y - - - - - - - - - - - - - - - - - - - - - - - - - - - -  
Junction temperature (TJ) - - - - - - - - - - - - - - - -  
Output current - - - - - - - - - - - - - - - - - - - - - - - -  
-0.5 V dc to +7.0 V dc  
-65°C to +150°C  
1.5 W  
+260°C  
5°C/W  
8°C/W  
+150°C 3/  
20 mA  
1.4 Recommended operating conditions.  
Supply voltage range (VCC) - - - - - - - - - - - - - -  
Supply voltage (VSS) - - - - - - - - - - - - - - - - - - -  
Input high voltage range (VIH) - - - - - - - - - - - - -  
Input low voltage range (VIL) - - - - - - - - - - - - - -  
Case operating temperature range (TC)- - - - - - -  
4.5 V dc to 5.5 V dc  
0 V  
2.2 V dc to VCC + 0.5 V dc  
-0.3 V dc to +0.8 V dc 4/  
-55°C to +125°C  
2. APPLICABLE DOCUMENTS  
2.1 Government specification, standards, and handbooks. The following specification, standards, and handbooks form a part  
of this drawing to the extent specified herein. Unless otherwise specified, the issues of these documents are those cited in the  
solicitation or contract.  
DEPARTMENT OF DEFENSE SPECIFICATION  
MIL-PRF-38535 - Integrated Circuits, Manufacturing, General Specification for.  
DEPARTMENT OF DEFENSE STANDARDS  
MIL-STD-883  
-
Test Method Standard Microcircuits.  
MIL-STD-1835 - Interface Standard Electronic Component Case Outlines.  
DEPARTMENT OF DEFENSE HANDBOOKS  
MIL-HDBK-103 - List of Standard Microcircuit Drawings.  
MIL-HDBK-780 - Standard Microcircuit Drawings.  
(Copies of these documents are available online at http://assist.daps.dla.mil/quicksearch/ or http://assist.daps.dla.mil or from  
the Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)  
2.2 Non-Government publications. The following document(s) form a part of this document to the extent specified herein.  
Unless otherwise specified, the issues of the documents are the issues of the documents cited in the solicitation.  
AMERICAN SOCIETY FOR TESTING AND MATERIALS (ASTM)  
ASTM Standard F1192-95  
-
Standard Guide for the Measurement of Single Event Phenomena from  
Heavy Ion Irradiation of Semiconductor Devices.  
(Applications for copies of ASTM publications should be addressed to: ASTM International, PO Box C700, 100 Barr  
Harbor Drive, West Conshohocken, PA 19428-2959; http://www.astm.org.)  
______________  
2/ Stresses above the absolute maximum rating may cause permanent damage to the device. Extended operation at the  
maximum levels may degrade performance and affect reliability.  
3/ Maximum junction temperature shall not be exceeded except for allowable short duration burn-in screening  
conditions in accordance with method 5004 of MIL-STD-883.  
4/ VIL minimum = -3.0 V dc for pulse width less than 20 ns.  
SIZE  
STANDARD  
5962-96795  
A
MICROCIRCUIT DRAWING  
DEFENSE SUPPLY CENTER COLUMBUS  
COLUMBUS, OHIO 43218-3990  
REVISION LEVEL  
C
SHEET  
3
DSCC FORM 2234  
APR 97  

与5962-9679502MXX相关器件

型号 品牌 获取价格 描述 数据表
5962-9679502MYA WEDC

获取价格

Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679502MYX WEDC

获取价格

Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679503MXA WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, FP-44
5962-9679503MXX WEDC

获取价格

IC 256K X 16 STANDARD SRAM, 20 ns, DFP44, FP-44, Static RAM
5962-9679503MYA WEDC

获取价格

Standard SRAM, 256KX16, 20ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679504MXA WEDC

获取价格

Standard SRAM, 256KX16, 35ns, CMOS, FP-44
5962-9679504MXX WEDC

获取价格

Standard SRAM, 256KX16, 35ns, CMOS, FP-44
5962-9679504MYA WEDC

获取价格

Standard SRAM, 256KX16, 35ns, CMOS, CDSO44, CERAMIC, SOJ-44
5962-9679505MXA WEDC

获取价格

Standard SRAM, 256KX16, 25ns, CMOS, FP-44
5962-9679505MYA WEDC

获取价格

Standard SRAM, 256KX16, 25ns, CMOS, CDSO44, CERAMIC, SOJ-44