Datasheet > 5962-8685911UA

5962-8685911UA

更新时间： 2024-11-04 20:16:39

品牌	Logo	应用领域
MICROSS		静态存储器内存集成电路
页数	文件大小	规格书
11页	156K
描述
Standard SRAM, 16KX4, 70ns, CMOS, CQCC28, CERAMIC, LCC-28

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

5962-8685911UA 数据手册

SRAM

MT5C6405

PIN ASSIGNMENT

16K x 4 SRAM

SRAM MEMORY ARRAY

(Top View)

24-Pin DIP (C)

(300 MIL)

AVAILABLE AS MILITARY

SPECIFICATIONS

• SMD 5962-86859

Vcc

•

MIL-STD-883

A10

A11

A12

A13

CE\ 10

OE\ 11

Vss 12

FEATURES

• High Speed: 12, 15, 20, 25, 35, 45, 55, and 70ns

• Battery Backup: 2V data retention

• High-performance, low-power CMOS double-metal

process

DQ4

DQ3

DQ2

DQ1

WE\

• Single +5V (+10%) Power Supply

• Easy memory expansion with CE\

• All inputs and outputs are TTL compatible

28-Pin LCC (EC)

2 1 28 27

OPTIONS

• Timing

MARKING

12ns access

15ns access

20ns access

25ns access

35ns access

45ns access

55ns access

70ns access

-12

-15

-20

-25

A10

A11

A12

A13

CE\

DQ4

19 DQ3

DQ2

13 14 15 16 17

-35

-45*

-55*

-70*

• Package(s)

Ceramic DIP (300 mil) C

Ceramic LCC

GENERAL DESCRIPTION

No. 106

E C

The Micross Components SRAM family employs high-

speed, low-power CMOS designs using a four-transistor mem-

ory cell. Austin Semiconductor SRAMs are fabricated using

double-layer metal, double-layer polysilicon technology.

For ﬂexibility in high-speed memory applications, Micross

Components offers chip enable (CE\) and output enable (OE\)

capability. These enhancements can place the outputs in High-Z

for additional ﬂexibility in system design.

No. 204

• Operating Temperature Ranges

Industrial (-40^oC to +85^oC)

Military (-55^oC to +125^oC)

• 2V data retention/low power

*Electrical characteristics identical to those provided for the 35ns ac-

cess devices.

Writing to these devices is accomplished when write enable

(WE\) and CE\ inputs are both LOW. Reading is accomplished

when WE\ remains HIGH and CE\ and OE\ go LOW. The

device offers a reduced power standby mode when disabled.

This allows system designs to achieve low standby power

requirements.

For more products and information

please visit our web site at

www.miross.com

All devices operate from a single +5V power supply and all

inputs and outputs are fully TTL compatible.

Micross Components reserves the right to change products or speciﬁcations without notice.

MT5C6405

Rev. 2.2 01/10

12 3 4 5 6 7...11

中文翻译

下载PDF

与5962-8685911UA相关器件

型号	品牌	获取价格	描述	数据表
5962-8685911UX	ETC	获取价格	x4 SRAM
5962-8685911XX	ETC	获取价格	x4 SRAM
5962-8685912KX	ETC	获取价格	x4 SRAM
5962-8685912LA	IDT	获取价格	Standard SRAM, 16KX4, 70ns, CMOS, CDIP24, 0.300 INCH, CERDIP-24
5962-8685912LX	ETC	获取价格	x4 SRAM
5962-8685912UA	MICROSS	获取价格	Standard SRAM, 16KX4, 70ns, CMOS, CQCC28, CERAMIC, LCC-28
5962-8685912UX	ETC	获取价格	x4 SRAM
5962-8685912XA	IDT	获取价格	Standard SRAM, 16KX4, 70ns, CMOS, CQCC28, LCC-28
5962-8685912XX	ETC	获取价格	x4 SRAM
5962-8685913KX	ETC	获取价格	x4 SRAM

与5962-8685911UA相关文章

英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

13
苹果iPhone 17将全系采用三星/LG显示LTPO OLED面板
2024-11-05

7
三星深化印度制造布局，供应链本地化进程加速
2024-10-29

35
芯擎科技“星辰一号”自动驾驶芯片点亮成功，2025年量产在即
2024-10-29

31

产品中心

服务支持

精选活动

关于我们

帮助中心

5962-8685911UA

5962-8685911UA 数据手册

与5962-8685911UA相关器件

与5962-8685911UA相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

5962-8685911UA

5962-8685911UA 数据手册

与5962-8685911UA相关器件

与5962-8685911UA相关文章

您还可以找

您在本页遇到什么问题？