Datasheet > 5962-3826701QXA

5962-3826701QXA

更新时间： 2024-09-17 14:02:43

品牌	Logo	应用领域
MICROSS		可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数	文件大小	规格书
14页	324K
描述
EEPROM, 128KX8, 250ns, Parallel, CMOS, CDIP32, CERDIP-32

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5962-3826701QXA 数据手册

EEPROM

AS28C010

128K x 8 EEPROM

EEPROM Memory

5 Volt, Byte Alterable

PIN ASSIGNMENT

(Top View)

32-Pin CFP (F), 32-Pin CerDIP (CW)

AVAILABLE AS MILITARY

SPECIFICATIONS

ꢀ SMD 5962-38267

ꢀ MIL-STD-883

RDY/BUSY\

A16

A14

A12

32 Vcc

31 A15

30 RES\

29 WE\

28 A13

27 A8

FEATURES

ꢀ Access speed: 120, 150, 200, and 250ns

ꢀ Data Retention: 100 Years

26 A9

ꢀ Low power, active current: 50mA, standby current: 500uA

ꢀ Single +5V (+10%) power supply

ꢀ Data Polling and Ready/Busy Signals

ꢀ Erase/Write Endurance (10,000 byte mode / 100,000 page

mode)

ꢀ Software Data protection Algorithm

ꢀ Data Protection Circuitry during power on/off

ꢀ Hardware Data Protection

25 A11

24 OE\

23 A10

22 CE\

21 I/O 7

20 I/O 6

19 I/O 5

18 I/O 4

17 I/O 3

I/O 0

I/O 1

I/O 2

Vss

ꢀ Automatic , Self-Timed Byte Write

ꢀ Automatic Programming:

Automatic Page Write: 10ms (MAX)

OPTIONS

ꢀ Timing

MARKINGS

150ns access

200ns access

250ns access

-15

-20

-25

ꢀ Packages

Ceramic Flat Pack

CerDIP, 600 mil

ꢀ Operating Temperature Ranges

-Military (-55^oC to +125^oC)

-Industrial (-40^oC to +85^oC)

-Full Military Processing

*NOTE: Package lid is connected to ground (Vss).

GENERAL DESCRIPTION

ware data protection is provided , in addition to noise protection on

the WE signal and write inhibit during power on and off. Software

data protection is implemented using JEDEC Optional Standard

algorithm.

The AS28C010 is designed for high reliability in the most

demanding applications. Data retention is speciﬁed for 100 years and

erase/write endurance is guaranteed to a minimum of 100,000 cycles

in the Page Mode and 10,000 cycles in the Byte Mode.

The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS

Electrically Erasable Programmable Read Only Memory (EEPROM)

organized as 131, 072 x 8 bits. TheAS28C010 is capable of in system

electrical Byte and Page reprogrammability.

The AS28C010 achieves high speed access, low power

consumption, and a high level of reliability by employing advanced

CMOS process and circuitry technology.

This device has a 256-Byte Page Programming function to make

its erase and write operations faster. The AS28C010 features Data

Polling and a Ready/Busy signal to indicate completion of erase and

programming operations.

For more products and information

please visit our web site at

www.micross.com

This EEPROM provides several levels of data protection. Hard-

Micross Components reserves the right to change products or speciﬁcations without notice.

AS28C010

Rev. 1.6 01/10

12 3 4 5 6 7...14

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与5962-3826701QXA相关器件

型号	品牌	获取价格	描述	数据表
5962-3826701QXM	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701QXQ	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701QXV	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701QZA	MICROSS	获取价格	EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, PACKAGE-32
5962-3826701QZM	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701QZQ	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701QZV	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701V6M	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701V6Q	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON
5962-3826701V6V	MAXWELL	获取价格	MICROCIRCUIT, MEMORY, DIGITAL, CMOS 128K x 8 BIT EEPROM, MONOLITHIC SILICON

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