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5962-3826701QZA PDF预览

5962-3826701QZA

更新时间: 2024-01-10 19:43:42
品牌 Logo 应用领域
MICROSS 可编程只读存储器电动程控只读存储器电可擦编程只读存储器内存集成电路
页数 文件大小 规格书
14页 324K
描述
EEPROM, 128KX8, 250ns, Parallel, CMOS, CDFP32, PACKAGE-32

5962-3826701QZA 技术参数

生命周期:Obsolete零件包装代码:DFP
包装说明:DFP,针数:32
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.51风险等级:5.06
最长访问时间:250 ns其他特性:100 YEAR DATA RETENTION
数据保留时间-最小值:100JESD-30 代码:R-CDFP-F32
长度:20.828 mm内存密度:1048576 bit
内存集成电路类型:EEPROM内存宽度:8
功能数量:1端子数量:32
字数:131072 words字数代码:128000
工作模式:SYNCHRONOUS最高工作温度:125 °C
最低工作温度:-55 °C组织:128KX8
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:DFP
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL编程电压:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883
座面最大高度:3.1242 mm最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
宽度:11.049 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

5962-3826701QZA 数据手册

 浏览型号5962-3826701QZA的Datasheet PDF文件第2页浏览型号5962-3826701QZA的Datasheet PDF文件第3页浏览型号5962-3826701QZA的Datasheet PDF文件第4页浏览型号5962-3826701QZA的Datasheet PDF文件第5页浏览型号5962-3826701QZA的Datasheet PDF文件第6页浏览型号5962-3826701QZA的Datasheet PDF文件第7页 
EEPROM  
AS28C010  
128K x 8 EEPROM  
EEPROM Memory  
5 Volt, Byte Alterable  
PIN ASSIGNMENT  
(Top View)  
32-Pin CFP (F), 32-Pin CerDIP (CW)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
SMD 5962-38267  
MIL-STD-883  
1
2
3
4
5
6
7
RDY/BUSY\  
A16  
A14  
A12  
A7  
32 Vcc  
31 A15  
30 RES\  
29 WE\  
28 A13  
27 A8  
FEATURES  
Access speed: 120, 150, 200, and 250ns  
Data Retention: 100 Years  
A6  
A5  
26 A9  
Low power, active current: 50mA, standby current: 500uA  
Single +5V (+10%) power supply  
Data Polling and Ready/Busy Signals  
Erase/Write Endurance (10,000 byte mode / 100,000 page  
mode)  
Software Data protection Algorithm  
Data Protection Circuitry during power on/off  
Hardware Data Protection  
8
9
A4  
A3  
A2  
A1  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 I/O 7  
20 I/O 6  
19 I/O 5  
18 I/O 4  
17 I/O 3  
10  
11  
12  
13  
14  
15  
16  
A0  
I/O 0  
I/O 1  
I/O 2  
Vss  
Automatic , Self-Timed Byte Write  
Automatic Programming:  
Automatic Page Write: 10ms (MAX)  
OPTIONS  
Timing  
MARKINGS  
150ns access  
200ns access  
250ns access  
-15  
-20  
-25  
Packages  
Ceramic Flat Pack  
F
CerDIP, 600 mil  
CW  
Operating Temperature Ranges  
-Military (-55oC to +125oC)  
-Industrial (-40oC to +85oC)  
-Full Military Processing  
XT  
IT  
Q
*NOTE: Package lid is connected to ground (Vss).  
GENERAL DESCRIPTION  
ware data protection is provided , in addition to noise protection on  
the WE signal and write inhibit during power on and off. Software  
data protection is implemented using JEDEC Optional Standard  
algorithm.  
The AS28C010 is designed for high reliability in the most  
demanding applications. Data retention is specied for 100 years and  
erase/write endurance is guaranteed to a minimum of 100,000 cycles  
in the Page Mode and 10,000 cycles in the Byte Mode.  
The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS  
Electrically Erasable Programmable Read Only Memory (EEPROM)  
organized as 131, 072 x 8 bits. TheAS28C010 is capable of in system  
electrical Byte and Page reprogrammability.  
The AS28C010 achieves high speed access, low power  
consumption, and a high level of reliability by employing advanced  
CMOS process and circuitry technology.  
This device has a 256-Byte Page Programming function to make  
its erase and write operations faster. The AS28C010 features Data  
Polling and a Ready/Busy signal to indicate completion of erase and  
programming operations.  
For more products and information  
please visit our web site at  
www.micross.com  
This EEPROM provides several levels of data protection. Hard-  
Micross Components reserves the right to change products or specications without notice.  
AS28C010  
Rev. 1.6 01/10  
1

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