Datasheet > 544H4

544H4

更新时间： 2024-09-12 23:21:47

品牌	Logo	应用领域
其他 - ETC		二极管
页数	文件大小	规格书
2页	35K
描述
Infrared Emitting Diodes (IRED)

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544H4 数据手册

GaAlAs HIGH POWER T-1 3/4 PACKAGE

INFRARED EMITTING DIODE

MIE-544H4

Description

Package Dimensions

The MIE-544H4 is a GaAlAs infrared LED having a

peak wavelength at 850nm. It features ultra-high power,

high response speed and molded package with higher

radiant intensity. In addition to improving the S/N ratio

in applied optical systems, the MIE-544H4 has greatly

improved long-distance characteristics as well as sign-

ificantly increased its range of applicability.

Unit: mm (inches)

f 5.05

(.200)

5.47

(.215)

7.62

(.300)

5.90

(.230

1.00

(.040)

SEE NOTE 2

FLAT DENOTES CATHODE

Features

23.40 MIN

(.920)

0.50 TYP.

(.020)

l Ultra-high radiant intensity

l High response speed

l Standard T-1 3/4 ( f 5mm ) package

l Peak wavelength l _p= 850 nm

l Radiant angle : 40°

1.00MIN.

(.040)

2.54NOM.

(.100)

SEE NOTE 3

Notes :

Application

lData communication

lSIR

1.Tolerance is ± 0.25 mm (.010") unless otherwise noted.

2.Protruded resin under flange is 1.5 mm (.059") max.

3.Lead spacing is measured where the leads emerge from the package.

Absolute Maximum Ratings

'@ T_A=25^oC

Parameter

Power Dissipation

Maximum Rating

Unit

120

Peak Forward Current(300pps,10ms pulse)

Continuos Forward Current

Reverse Voltage

100

-55^oC to +100^oC

260^oC for 5 seconds

Operating Temperature Range

Storage Temperature Range

Lead Soldering Temperature

Unity Opto Technology Co., Ltd.

11/17/2000

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