Datasheet > 振荡器 > XO> 530CB10M000DG

530CB10M000DG

更新时间： 2024-10-29 08:04:59

品牌	Logo	应用领域
芯科 - SILICON		石英晶振振荡器
页数	文件大小	规格书
12页	216K
描述
Oscillator, 10MHz Min, 160MHz Max, 10MHz Nom

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530CB10M000DG 数据手册

Si530/531

Table 2. CLK± Output Frequency Characteristics (Continued)

Parameter

Symbol

Test Condition

Min

—

Typ

—

Max

±20

Units

ppm

Temp stability = ±7 ppm

Temp stability = ±20 ppm

Temp stability = ±50 ppm

Total Stability

—

±31.5

±61.5

—

Powerup Time⁴

t_OSC

—

Notes:

1. See Section 3. "Ordering Information" on page 7 for further details.

2. Specified at time of order by part number. Also available in frequencies from 970 to 1134 MHz and 1213 to 1417 MHz.

3. Selectable parameter specified by part number.

4. Time from powerup or tristate mode to f_O.

Table 3. CLK± Output Levels and Symmetry

Parameter

Symbol

Test Condition

mid-level

Min

V_DD– 1.42

1.1

Typ

—

Max

V_DD– 1.25

1.9

Units

LVPECL Output Option

V_OD

V_SE

swing (diff)

—

V_PP

swing (single-ended)

mid-level

0.55

—

0.95

LVDS Output Option

1.125

1.20

1.275

swing (diff)

V_OD

V_O

0.5

—

0.7

0.9

—

V_PP

CML Output Option

mid-level

– 0.75

V_OD

V_OH

V_OL

swing (diff)

0.70

0.8 x V_DD

—

0.95

—

1.20

V_DD

0.4

350

—

V_PP

CMOS Output Option

= 32 mA

I_OL= 32 mA

—

Rise/Fall time (20/80%)

Symmetry (duty cycle)

t_{R, F}

LVPECL/LVDS/CML

—

CMOS with C = 15 pF

—

SYM

LVPECL:

LVDS:

– 1.3 V (diff)

—

1.25 V (diff)

CMOS:

Notes:

1. 50 Ω to V_DD– 2.0 V.

2. R_term= 100 Ω (differential).

3. C_L= 15 pF

Rev. 1.1

1 234 5 6 7...12

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