Datasheet > 4R3STX

4R3STX

更新时间： 2024-11-14 01:18:03

品牌	Logo	应用领域
SSDI		/
页数	文件大小	规格书
2页	171K
描述
8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

4R3STX 数据手册

2R3S THRU 20R3S

Solid State Devices, Inc.

14701 Firestone Blvd * La Mirada, Ca 90638

Phone: (562) 404-4474 * Fax: (562) 404-1773

ssdi@ssdi-power.com * www.ssdi-power.com

Designer’s Data Sheet

8 AMPS

20 – 200 VOLTS

35 nsec

Part Number/Ordering Information ^1/

R3S

│

└

Screening^3/__ = Not Screened

TX = TX Level

│

HYPER FAST RECTIFIER

TXV = TXV Level

S = S Level

└

Features:

Family/Voltage

2 = 20V

3 = 30V

4 = 40V

5 = 50V

•

Hyper Fast Recovery: 35nsec Maximum

Low Forward Voltage Drop

Low Reverse Leakage Current

Single Chip Construction

Hermetically Sealed Package

7 = 70V

10 = 100V

12 = 125V

15 = 150V

20 = 200V

Metalurgically Bonded Construction

TX, TXV, and S-Level Screening Available ^2/

Maximum Ratings ^2/

Symbol

Value

Units

2R3S

3R3S

4R3S

5R3S

7R3S

10R3S

12R3S

15R3S

20R3S

V_RRM

V_RWM

V_R

100

125

150

200

Peak Repetitive Reverse Voltage

Volts

Average Rectified Forward Current

200

Amps

ºC

(Resistive Load, 60 Hz Sine Wave, T_A= 25 °C)

Peak Surge Current

(8.3 ms Pulse, Half Sine Wave, T_A= 25 °C)

I_FSM

T_OP

T_STG

Operating & Storage Temperature

-65 to +175

1.5

Maximum Total Thermal Resistance

Junction to Case

ºC/W

R_θJC

DO-4:

Notes:

1/ For ordering information, Price, Operating Curves, and Availability- Contact Factory.

2/ Unless Otherwise Specified, All Maximum Ratings/Electrical Characteristics @25°C.

3/ Screened to MIL-PRF-19500.

NOTE: All specifications are subject to change without notification.

SCD's for these devices should be reviewed by SSDI prior to release.

DATA SHEET #: RC0029D

DOC

中文翻译

下载PDF

与4R3STX相关器件

型号	品牌	获取价格	描述	数据表
4R3STXV	SSDI	获取价格	8 AMPS 20 - 200 VOLTS 35 nsec HYPER FAST RECTIFIER
4R3TI20Y060	FUJI	获取价格	Trigger Device
4R3TI20Y-080	FUJI	获取价格	DIODE and TYRISTOR MODULE
4R3TI30Y	FUJI	获取价格	Silicon Controlled Rectifier, 800V V(DRM), 3 Element
4R3TI30Y060	FUJI	获取价格	Trigger Device
4R3TI30Y-080	FUJI	获取价格	DIODE and TYRISTOR MODULE
4R3TI60Y	FUJI	获取价格	Silicon Controlled Rectifier, 800V V(DRM), 3 Element
4R3TI60Y-080	FUJI	获取价格	DIODE and TYRISTOR MODULE
4R4	PRODUCTWELL	获取价格	SHIELDED SMT POWER INDUCTORS
4R4F06E02C200	MOLEX	获取价格	Nano-Change (M8) Receptacle, M8 x 0.5 Mounting Threads, Straight Male, Male Length 0.50m (