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4N60L-TMS-T PDF预览

4N60L-TMS-T

更新时间: 2024-01-22 13:55:15
品牌 Logo 应用领域
友顺 - UTC /
页数 文件大小 规格书
9页 403K
描述
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

4N60L-TMS-T 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:,Reach Compliance Code:compliant
风险等级:5.56配置:Single
最大漏极电流 (Abs) (ID):4 AFET 技术:METAL-OXIDE SEMICONDUCTOR
最高工作温度:150 °C极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W子类别:FET General Purpose Power
表面贴装:NOBase Number Matches:1

4N60L-TMS-T 数据手册

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UNISONIC TECHNOLOGIES CO., LTD  
4N60  
Power MOSFET  
4A, 600V N-CHANNEL  
POWER MOSFET  
DESCRIPTION  
The UTC 4N60 is a high voltage power MOSFET and is  
designed to have better characteristics, such as fast switching  
time, low gate charge, low on-state resistance and have a high  
rugged avalanche characteristics. This power MOSFET is usually  
used at high speed switching applications in power supplies,  
PWM motor controls, high efficient DC to DC converters and  
bridge circuits.  
FEATURES  
* RDS(ON) < 2.5@VGS = 10 V  
* Fast Switching Capability  
* Avalanche Energy Specified  
* Improved dv/dt Capability, high Ruggedness  
SYMBOL  
www.unisonic.com.tw  
1 of 9  
Copyright © 2014 Unisonic Technologies Co., Ltd  
QW-R502-061.Y  

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